Datasheets
IRF2807ZSTRR by:

Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3

Part Details for IRF2807ZSTRR by International Rectifier

Overview of IRF2807ZSTRR by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF2807ZSTRR

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IRF2807ZSTRR Part Data Attributes

IRF2807ZSTRR International Rectifier
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IRF2807ZSTRR International Rectifier Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0094 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF2807ZSTRR

This table gives cross-reference parts and alternative options found for IRF2807ZSTRR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2807ZSTRR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF2807ZSTRLPBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRF2807ZSTRLPBF
IRF2807ZSTRL Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRF2807ZSTRL
IRF2807ZSPBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRF2807ZSPBF
IRF2807ZSTRRPBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRF2807ZSTRRPBF
Part Number Description Manufacturer Compare
IRFZ48ZSTRLPBF Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRFZ48ZSTRLPBF
IRF3710ZSPBF Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRF3710ZSPBF
AUIRFZ46NSTRR Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier IRF2807ZSTRR vs AUIRFZ46NSTRR
IRFZ48ZSTRRPBF Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRFZ48ZSTRRPBF
IRFS3806PBF Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF2807ZSTRR vs IRFS3806PBF
AUIRF4104STRL Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 International Rectifier IRF2807ZSTRR vs AUIRF4104STRL
AUIRF4104 Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 International Rectifier IRF2807ZSTRR vs AUIRF4104
2N6768 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,14A I(D),TO-3 Intersil Corporation IRF2807ZSTRR vs 2N6768
AUIRFZ46NS Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET International Rectifier IRF2807ZSTRR vs AUIRFZ46NS
IRFR014TR Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRF2807ZSTRR vs IRFR014TR

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