Datasheets
IRF240 by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,

Part Details for IRF240 by Harris Semiconductor

Overview of IRF240 by Harris Semiconductor

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Part Details for IRF240

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IRF240 Part Data Attributes:

IRF240 Harris Semiconductor
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IRF240 Harris Semiconductor Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 140 ns
Turn-on Time-Max (ton) 90 ns

Alternate Parts for IRF240

This table gives cross-reference parts and alternative options found for IRF240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF240 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF240 vs IRF240
UFN240 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF240 vs UFN240
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF240 vs IRF240
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Motorola Semiconductor Products IRF240 vs IRF240
IRF240 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF240 vs IRF240
IRF240 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF240 vs IRF240
Part Number Description Manufacturer Compare
IRF241R Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF240 vs IRF241R
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF240 vs IRF242
IRF241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Motorola Semiconductor Products IRF240 vs IRF241
IRF244 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF240 vs IRF244
IRF241 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF240 vs IRF241
IRF242 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF240 vs IRF242
IRF240 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF240 vs IRF240
IRF243 16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF240 vs IRF243
IRF241 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier IRF240 vs IRF241
IRF240 Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF240 vs IRF240

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