Datasheets
IRF231 by:

9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for IRF231 by Rochester Electronics LLC

Overview of IRF231 by Rochester Electronics LLC

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Part Details for IRF231

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IRF231 Part Data Attributes

IRF231 Rochester Electronics LLC
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IRF231 Rochester Electronics LLC 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF231

This table gives cross-reference parts and alternative options found for IRF231. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF231, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN International Rectifier IRF231 vs JAN2N6758
IRF230 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF231 vs IRF230
2N6758R1 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF231 vs 2N6758R1
IRF230R1 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF231 vs IRF230R1
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF231 vs 2N6758
JANTX2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF231 vs JANTX2N6758
IRF232 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET FCI Semiconductor IRF231 vs IRF232
2N6758 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF231 vs 2N6758
UFN233 Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF231 vs UFN233
IRF230R1 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN TT Electronics Resistors IRF231 vs IRF230R1
Part Number Description Manufacturer Compare
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF231 vs IRF141
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF231 vs 2N6758
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation IRF231 vs JANTXV2N6756
IRF220 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF231 vs IRF220
IRF133R 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF231 vs IRF133R
IRF1302L Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF231 vs IRF1302L
IRF232R 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF231 vs IRF232R
IRF130SMD-JQR-BR4 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF231 vs IRF130SMD-JQR-BR4
UFN232 Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF231 vs UFN232
IRF130SMD05DSG-JQR-B 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF231 vs IRF130SMD05DSG-JQR-B

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