Part Details for IRF1404 by International Rectifier
Results Overview of IRF1404 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF1404 Information
IRF1404 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1404
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 260 |
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NexGen Digital | 576 |
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RFQ | ||
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Win Source Electronics | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥) | 13649 |
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$0.4334 / $0.5597 | Buy Now |
Part Details for IRF1404
IRF1404 CAD Models
IRF1404 Part Data Attributes
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IRF1404
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF1404
International Rectifier
Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE, FAST SWITCHING, AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 620 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 202 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 808 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1404
This table gives cross-reference parts and alternative options found for IRF1404. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1404, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1404 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 202A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1404 vs IRF1404 |
| IRF1404ZGPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | IRF1404 vs IRF1404ZGPBF |
| IRF1404ZL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | IRF1404 vs IRF1404ZL |
| IRF1404ZLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | IRF1404 vs IRF1404ZLPBF |
| IRF1404ZPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | IRF1404 vs IRF1404ZPBF |
| AUIRF1404Z | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IRF1404 vs AUIRF1404Z |
IRF1404 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF1404 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
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The junction-to-case thermal resistance (RθJC) for the IRF1404 can be calculated using the thermal resistance values provided in the datasheet and the package dimensions. A detailed calculation is provided in the International Rectifier application note AN-1140.
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The recommended gate drive voltage for the IRF1404 is typically between 10V and 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and power consumption.
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Yes, the IRF1404 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and stable voltage transition.
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In a synchronous rectifier application, the body diode of the IRF1404 can be handled by using a Schottky diode in parallel with the MOSFET, or by using a dedicated synchronous rectifier controller that can actively control the body diode conduction.