Datasheets
IRF140 by:

28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Part Details for IRF140 by Intersil Corporation

Overview of IRF140 by Intersil Corporation

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Part Details for IRF140

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IRF140 Part Data Attributes:

IRF140 Intersil Corporation
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IRF140 Intersil Corporation 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns

Alternate Parts for IRF140

This table gives cross-reference parts and alternative options found for IRF140. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF140, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF142 Power Field-Effect Transistor, 24A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF140 vs IRF142
IRF141 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN Rochester Electronics LLC IRF140 vs IRF141
IRF143 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF140 vs IRF143
IRF140 Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF140 vs IRF140
IRF140 Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier IRF140 vs IRF140
IRF140 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF140 vs IRF140
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF140 vs IRF141
IRF140-JQR-BR1 Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 TT Electronics Resistors IRF140 vs IRF140-JQR-BR1
IRF142 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF140 vs IRF142
IRF142 24A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF140 vs IRF142
Part Number Description Manufacturer Compare
JANTXV2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF140 vs JANTXV2N6756
IRF230EA Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF140 vs IRF230EA
IRF133 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF140 vs IRF133
IRF230-JQR-B Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN TT Electronics Resistors IRF140 vs IRF230-JQR-B
2N6755 12A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF140 vs 2N6755
IRF130SMD05DSG 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF140 vs IRF130SMD05DSG
2N6758 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF140 vs 2N6758
JAN2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF140 vs JAN2N6758
2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF140 vs 2N6756
JAN2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN Microsemi Corporation IRF140 vs JAN2N6756

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