Datasheets
IRF122 by:
International Rectifier
FCI Semiconductor
General Electric Solid State
Harris Semiconductor
International Rectifier
Intersil Corporation
New Jersey Semiconductor Products Inc
New Jersey Semiconductor Products, Inc.
Rochester Electronics LLC
Samsung Semiconductor
SGS Semiconductor Ltd
SGS Thomson
Thomson Consumer Electronics
Vishay Dale
Vishay Intertechnologies
Vishay Siliconix
Not Found

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF122 by International Rectifier

Overview of IRF122 by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRF122

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRF122-600047-ND
DigiKey 8.0A, 100V, 0.36 OHM, N-CHANNEL, Min Qty: 341 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 731
In Stock
  • 341 $0.8800
$0.8800 Buy Now
Quest Components   57
  • 1 $2.4200
  • 15 $1.5125
  • 51 $1.3310
$1.3310 / $2.4200 Buy Now
Quest Components   3
  • 1 $2.8180
  • 3 $2.1135
$2.1135 / $2.8180 Buy Now
Rochester Electronics 8.0A, 100V, 0.36 OHM, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 731
  • 1 $0.8474
  • 25 $0.8305
  • 100 $0.7966
  • 500 $0.7627
  • 1,000 $0.7203
$0.7203 / $0.8474 Buy Now

Part Details for IRF122

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IRF122 Part Data Attributes

IRF122 International Rectifier
Buy Now Datasheet
Compare Parts:
IRF122 International Rectifier Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF122

This table gives cross-reference parts and alternative options found for IRF122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF122 FCI Semiconductor Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF122 vs IRF122
IRF122 Samsung Semiconductor Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF122 vs IRF122
Part Number Manufacturer Composite Price Description Compare
2N6758 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, IRF122 vs 2N6758
IRF141 Motorola Mobility LLC Check for Price 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE IRF122 vs IRF141
IRF142R Harris Semiconductor Check for Price Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE IRF122 vs IRF142R
JANTX2N6756 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF122 vs JANTX2N6756
IRF140 Rochester Electronics LLC Check for Price 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF122 vs IRF140
IRF230R1 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN IRF122 vs IRF230R1
IRF1205 International Rectifier Check for Price Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF122 vs IRF1205
IRF1302LPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 174A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRF122 vs IRF1302LPBF
IRF230EPBF International Rectifier Check for Price Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA IRF122 vs IRF230EPBF
IRF142 STMicroelectronics Check for Price 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 IRF122 vs IRF142

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