Part Details for IRF122 by International Rectifier
Overview of IRF122 by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF122
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF122-600047-ND
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DigiKey | 8.0A, 100V, 0.36 OHM, N-CHANNEL, Min Qty: 341 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
731 In Stock |
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$0.8800 | Buy Now |
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Quest Components | 57 |
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$1.3310 / $2.4200 | Buy Now | |
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Quest Components | 3 |
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$2.1135 / $2.8180 | Buy Now | |
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Rochester Electronics | 8.0A, 100V, 0.36 OHM, N-Channel, POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 731 |
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$0.7203 / $0.8474 | Buy Now |
Part Details for IRF122
IRF122 CAD Models
IRF122 Part Data Attributes
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IRF122
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF122
International Rectifier
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Select a part to compare: |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9.2 A | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-204AA | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 40 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for IRF122
This table gives cross-reference parts and alternative options found for IRF122. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF122, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF122 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF122 vs IRF122 |
IRF122 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF122 vs IRF122 |