Datasheets
IRF121 by:

Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF121 by Harris Semiconductor

Overview of IRF121 by Harris Semiconductor

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Part Details for IRF121

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IRF121 Part Data Attributes:

IRF121 Harris Semiconductor
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IRF121 Harris Semiconductor Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 9.2 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 60 W
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 59 ns
Turn-on Time-Max (ton) 58 ns

Alternate Parts for IRF121

This table gives cross-reference parts and alternative options found for IRF121. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF121, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF121 vs IRF121
Part Number Description Manufacturer Compare
MTM15N06E 15A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF121 vs MTM15N06E
IRF123 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF121 vs IRF123
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF121 vs IRF121
IRF123 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF121 vs IRF123
MTM10N06E Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF121 vs MTM10N06E
MTM10N06E 10A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC IRF121 vs MTM10N06E

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