Datasheets
IRF1018ESLPBF by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN

Part Details for IRF1018ESLPBF by International Rectifier

Results Overview of IRF1018ESLPBF by International Rectifier

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF1018ESLPBF Information

IRF1018ESLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRF1018ESLPBF

IRF1018ESLPBF CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IRF1018ESLPBF Part Data Attributes

IRF1018ESLPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF1018ESLPBF International Rectifier Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 88 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 79 A
Drain-source On Resistance-Max 0.0084 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 315 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

IRF1018ESLPBF Related Parts