Datasheets
IRF1010NSTRRPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF1010NSTRRPBF by International Rectifier

Overview of IRF1010NSTRRPBF by International Rectifier

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Applications Industrial Automation

Part Details for IRF1010NSTRRPBF

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IRF1010NSTRRPBF Part Data Attributes

IRF1010NSTRRPBF International Rectifier
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IRF1010NSTRRPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 290 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1010NSTRRPBF

This table gives cross-reference parts and alternative options found for IRF1010NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1010NSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRF1010NSTRR
IRF1010NS Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRF1010NS
IRF1010NSTRL Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRF1010NSTRL
IRF1010NSTRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRF1010NSTRLPBF
IRF1010NSTRRPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1010NSTRRPBF vs IRF1010NSTRRPBF
IRF1010NSPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRF1010NSPBF
Part Number Description Manufacturer Compare
BUK752R7-30B 75A, 30V, 0.0027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors IRF1010NSTRRPBF vs BUK752R7-30B
BUK7506-75B 75A, 75V, 0.0056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors IRF1010NSTRRPBF vs BUK7506-75B
BUK9230-100B,118 N-channel TrenchMOS logic level FET@en-us DPAK 3-Pin Nexperia IRF1010NSTRRPBF vs BUK9230-100B,118
PHP153NQ08LT,127 PHP153NQ08LT NXP Semiconductors IRF1010NSTRRPBF vs PHP153NQ08LT,127
IRFZ34VSTRL Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 Infineon Technologies AG IRF1010NSTRRPBF vs IRFZ34VSTRL
IRFZ44VZSPBF Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRFZ44VZSPBF
BUK9509-75A Power Field-Effect Transistor Nexperia IRF1010NSTRRPBF vs BUK9509-75A
IRFZ34VSTRRPBF Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs IRFZ34VSTRRPBF
BUK9509-75A,127 N-channel TrenchMOS logic level FET TO-220 3-Pin NXP Semiconductors IRF1010NSTRRPBF vs BUK9509-75A,127
AUIRFZ44VZSTRR Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLAINT, PLASTIC, D2PAK-3 International Rectifier IRF1010NSTRRPBF vs AUIRFZ44VZSTRR

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