Part Details for IRF1010NSTRLPBF by Infineon Technologies AG
Overview of IRF1010NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (17 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IRF1010NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC9170
|
Newark | Mosfet, N-Ch, 55V, 85A, To-263Ab, Transistor Polarity:N Channel, Continuous Drain Current Id:85A, Drain Source Voltage Vds:55V, On Resistance Rds(On):0.011Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipationrohs Compliant: Yes |Infineon IRF1010NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 469 |
|
$0.8930 / $1.4900 | Buy Now |
|
DISTI #
IRF1010NSTRLPBFCT-ND
|
DigiKey | MOSFET N-CH 55V 85A D2PAK Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1660 In Stock |
|
$0.7398 / $2.4900 | Buy Now |
|
DISTI #
IRF1010NSTRLPBF
|
Avnet Americas | Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1010NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
942-IRF1010NSTRLPBF
|
Mouser Electronics | MOSFETs MOSFT 55V 84A 11mOhm 80nC RoHS: Compliant | 8727 |
|
$0.7390 / $1.3700 | Buy Now |
|
DISTI #
E02:0323_00176684
|
Arrow Electronics | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2439 | Europe - 4000 |
|
$0.7314 / $0.7835 | Buy Now |
|
DISTI #
V36:1790_13891254
|
Arrow Electronics | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2439 | Americas - 800 |
|
$0.6866 / $0.7355 | Buy Now |
|
DISTI #
V72:2272_13891254
|
Arrow Electronics | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2229 Container: Cut Strips | Americas - 235 |
|
$0.7429 / $0.7769 | Buy Now |
|
DISTI #
70017645
|
RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 11 Milliohms, ID 85A, D2Pak, PD 180W, VGS +/-20V | Infineon IRF1010NSTRLPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
|
$1.1700 / $1.3700 | RFQ |
|
|
Future Electronics | Single N-Channel 55V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 4800Reel |
|
$0.7150 / $0.7850 | Buy Now |
|
|
Future Electronics | Single N-Channel 55V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Container: Reel | 2400Reel |
|
$0.7150 / $0.7850 | Buy Now |
Part Details for IRF1010NSTRLPBF
IRF1010NSTRLPBF CAD Models
IRF1010NSTRLPBF Part Data Attributes
|
|
IRF1010NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF1010NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF1010NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1010NSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSTRR |
| IRF1010NS | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NS |
| IRF1010NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSTRL |
| IRF1010NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSTRRPBF |
| IRF1010NSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSTRLPBF |
| IRF1010NSTRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSTRRPBF |
| IRF1010NSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF1010NSTRLPBF vs IRF1010NSPBF |