Part Details for IRF1010NS by International Rectifier
Overview of IRF1010NS by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for IRF1010NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 480 |
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$0.4200 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 30 |
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$2.4150 / $4.8300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 192 |
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$0.9010 / $1.8020 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 384 |
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$0.5200 / $2.0000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 456 |
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$1.0000 / $2.5000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 188 |
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RFQ | |
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Win Source Electronics | Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A⑦) | 25515 |
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$0.7160 / $1.0740 | Buy Now |
Part Details for IRF1010NS
IRF1010NS CAD Models
IRF1010NS Part Data Attributes:
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IRF1010NS
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF1010NS
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010NS
This table gives cross-reference parts and alternative options found for IRF1010NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF1010NSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010NS vs IRF1010NSTRRPBF |
| IRF1010NSTRLPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010NS vs IRF1010NSTRLPBF |
| IRF1010NSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF1010NS vs IRF1010NSPBF |
| IRF1010NSTRL | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF1010NS vs IRF1010NSTRL |
| IRF1010NS | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010NS vs IRF1010NS |
| IRF1010NSTRRPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010NS vs IRF1010NSTRRPBF |
| IRF1010NSPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010NS vs IRF1010NSPBF |
| IRF1010NSTRLPBF | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010NS vs IRF1010NSTRLPBF |