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Power Field-Effect Transistor, 209A I(D), 100V, 0.00128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
22AJ2196
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Newark | Mosfet, N-Ch, 100V, 209A, To-247 Rohs Compliant: Yes |Infineon IRF100P218AKMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 147 |
|
$5.4200 / $8.5900 | Buy Now |
DISTI #
448-IRF100P218AKMA1-ND
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DigiKey | MOSFET N-CH 100V 209A TO247AC Min Qty: 1 Lead time: 20 Weeks Container: Tube |
38 In Stock |
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$4.3919 / $8.2600 | Buy Now |
DISTI #
IRF100P218AKMA1
|
Avnet Americas | Transistor Power MOSFET N-Channel 100V 483A 3-Pin TO-247 Tube - Rail/Tube (Alt: IRF100P218AKMA1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 97975 |
|
$5.3281 | Buy Now |
DISTI #
726-IRF100P218AKMA1
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 334 |
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$4.3900 / $8.2600 | Buy Now |
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Future Electronics | 100v,209a,1.28MOHM,TO-247 mosfet RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Container: Tube | 775Tube |
|
$3.7300 | Buy Now |
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Future Electronics | 100v,209a,1.28MOHM,TO-247 mosfet RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Container: Tube | 0Tube |
|
$4.5900 / $4.7200 | Buy Now |
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Rochester Electronics | IRF100P218 - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 | 50 |
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$4.2600 / $5.0100 | Buy Now |
DISTI #
IRF100P218AKMA1
|
Avnet Americas | Transistor Power MOSFET N-Channel 100V 483A 3-Pin TO-247 Tube - Rail/Tube (Alt: IRF100P218AKMA1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube | 97975 |
|
$5.3281 | Buy Now |
|
Ameya Holding Limited | 152 |
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RFQ |
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IRF100P218AKMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF100P218AKMA1
Infineon Technologies AG
Power Field-Effect Transistor, 209A I(D), 100V, 0.00128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1050 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 209 A | |
Drain-source On Resistance-Max | 0.00128 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 150 pF | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 556 W | |
Pulsed Drain Current-Max (IDM) | 836 A | |
Reference Standard | IEC-61249-2-21; IEC-68-1 | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |