Datasheets
IRF100P218AKMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 209A I(D), 100V, 0.00128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Part Details for IRF100P218AKMA1 by Infineon Technologies AG

Overview of IRF100P218AKMA1 by Infineon Technologies AG

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Price & Stock for IRF100P218AKMA1

Part # Distributor Description Stock Price Buy
DISTI # 22AJ2196
Newark Mosfet, N-Ch, 100V, 209A, To-247 Rohs Compliant: Yes |Infineon IRF100P218AKMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 147
  • 1 $8.5900
  • 10 $7.7300
  • 25 $6.8600
  • 50 $6.5000
  • 100 $6.1400
  • 250 $5.7700
  • 800 $5.4200
$5.4200 / $8.5900 Buy Now
DISTI # 448-IRF100P218AKMA1-ND
DigiKey MOSFET N-CH 100V 209A TO247AC Min Qty: 1 Lead time: 20 Weeks Container: Tube 38
In Stock
  • 1 $8.2600
  • 25 $6.5964
  • 100 $5.9022
  • 500 $5.2078
  • 1,000 $4.6870
  • 2,000 $4.3919
$4.3919 / $8.2600 Buy Now
DISTI # IRF100P218AKMA1
Avnet Americas Transistor Power MOSFET N-Channel 100V 483A 3-Pin TO-247 Tube - Rail/Tube (Alt: IRF100P218AKMA1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 97975
  • 25 $5.3281
$5.3281 Buy Now
DISTI # 726-IRF100P218AKMA1
Mouser Electronics MOSFET TRENCH >=100V RoHS: Compliant 334
  • 1 $8.2600
  • 10 $8.0600
  • 25 $6.6000
  • 100 $5.9100
  • 250 $5.8700
  • 400 $4.6800
  • 1,200 $4.3900
$4.3900 / $8.2600 Buy Now
Future Electronics 100v,209a,1.28MOHM,TO-247 mosfet RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Container: Tube 775
Tube
  • 25 $3.7300
$3.7300 Buy Now
Future Electronics 100v,209a,1.28MOHM,TO-247 mosfet RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Container: Tube 0
Tube
  • 400 $4.7200
  • 800 $4.5900
$4.5900 / $4.7200 Buy Now
Rochester Electronics IRF100P218 - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 50
  • 1 $5.0100
  • 25 $4.9100
  • 100 $4.7100
  • 500 $4.5100
  • 1,000 $4.2600
$4.2600 / $5.0100 Buy Now
DISTI # IRF100P218AKMA1
Avnet Americas Transistor Power MOSFET N-Channel 100V 483A 3-Pin TO-247 Tube - Rail/Tube (Alt: IRF100P218AKMA1) RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Tube 97975
  • 25 $5.3281
$5.3281 Buy Now
Ameya Holding Limited   152
RFQ

Part Details for IRF100P218AKMA1

IRF100P218AKMA1 CAD Models

IRF100P218AKMA1 Part Data Attributes:

IRF100P218AKMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF100P218AKMA1 Infineon Technologies AG Power Field-Effect Transistor, 209A I(D), 100V, 0.00128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1050 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 209 A
Drain-source On Resistance-Max 0.00128 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 150 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 556 W
Pulsed Drain Current-Max (IDM) 836 A
Reference Standard IEC-61249-2-21; IEC-68-1
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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