Part Details for IRF054 by International Rectifier
Results Overview of IRF054 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF054 Information
IRF054 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF054
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 2 |
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$8.7750 | Buy Now |
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Quest Components | 48 |
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$24.8387 / $29.2220 | Buy Now | |
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Quest Components | 1 |
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$11.7000 | Buy Now |
Part Details for IRF054
IRF054 CAD Models
IRF054 Part Data Attributes
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IRF054
International Rectifier
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Datasheet
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IRF054
International Rectifier
Power Field-Effect Transistor, 45A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | |
| Reach Compliance Code | compliant | |
| Avalanche Energy Rating (Eas) | 480 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 200 ns | |
| Turn-on Time-Max (ton) | 213 ns |
IRF054 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF054 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 20% of its maximum voltage and current ratings to ensure safe operation.
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The junction-to-case thermal resistance (RθJC) for the IRF054 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, the thermal resistance from junction to ambient (RθJA) is 62°C/W. You can use the following formula to estimate RθJC: RθJC = RθJA - RθCS, where RθCS is the thermal resistance from case to sink (typically around 0.5°C/W to 1°C/W).
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The recommended gate drive voltage for the IRF054 is not explicitly stated in the datasheet, but it's generally recommended to use a gate drive voltage between 10V to 15V to ensure proper switching and minimize power losses.
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The IRF054 is a general-purpose MOSFET and not optimized for high-frequency switching applications. While it can be used in switching applications, its performance may not be optimal above 100 kHz. For high-frequency switching applications, it's recommended to use a MOSFET specifically designed for high-frequency operation, such as the IRF510 or IRF630.
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During startup and shutdown, it's essential to ensure that the gate-source voltage (VGS) is within the recommended range to prevent damage to the device. A simple solution is to use a gate driver IC or a voltage regulator to provide a controlled VGS voltage during these transitions.