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Part Details for IPZ40N04S5L-2R8 by Infineon Technologies AG
Overview of IPZ40N04S5L-2R8 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPZ40N04S5L-2R8
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
79005676
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Verical | Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin TSDSON EP T/R Min Qty: 74 Package Multiple: 1 Date Code: 2301 | Americas - 5000 |
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$0.9427 / $1.1675 | Buy Now |
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Quest Components | 4000 |
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$0.8715 / $2.3240 | Buy Now | |
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DISTI #
TMOSP11645
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Rutronik | N-CH 40V 40A 2,8mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel |
Stock DE - 25000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4223 | Buy Now |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 5000 |
|
$0.5810 / $1.6320 | Buy Now |
Part Details for IPZ40N04S5L-2R8
IPZ40N04S5L-2R8 CAD Models
IPZ40N04S5L-2R8 Part Data Attributes
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IPZ40N04S5L-2R8
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPZ40N04S5L-2R8
Infineon Technologies AG
Power Field-Effect Transistor, 40A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TSDSON-8, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |