Datasheets
IPZ40N04S53R1ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 40A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8-33, 8 PIN

Part Details for IPZ40N04S53R1ATMA1 by Infineon Technologies AG

Overview of IPZ40N04S53R1ATMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPZ40N04S53R1ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 34AC1738
Newark Mosfet, Aec-Q101, N-Ch, 40V, Tsdson, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0025Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Infineon IPZ40N04S53R1ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2278
  • 1 $1.2300
  • 10 $0.9970
  • 25 $0.9190
  • 50 $0.8420
  • 100 $0.7640
  • 250 $0.6850
  • 500 $0.6060
  • 1,000 $0.5100
$0.5100 / $1.2300 Buy Now
DISTI # IPZ40N04S53R1ATMA1CT-ND
DigiKey MOSFET N-CH 40V 40A 8TSDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 5415
In Stock
  • 1 $1.4900
  • 10 $0.9410
  • 100 $0.6265
  • 500 $0.4917
  • 1,000 $0.4483
  • 2,000 $0.4118
  • 5,000 $0.3724
  • 10,000 $0.3638
$0.3638 / $1.4900 Buy Now
DISTI # IPZ40N04S53R1ATMA1
Avnet Americas Power MOSFET, N Channel, 40 V, 40 A, 3.1 Milliohms, TSDSON, 8 Pins, Surface Mount - Tape and Reel (Alt: IPZ40N04S53R1ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 726-IPZ40N04S53R1ATM
Mouser Electronics MOSFETs MOSFET_(20V 40V) RoHS: Compliant 9480
  • 1 $0.9600
  • 10 $0.7920
  • 100 $0.5540
  • 500 $0.4450
  • 1,000 $0.4270
  • 5,000 $0.4270
  • 10,000 $0.3630
$0.3630 / $0.9600 Buy Now
Future Electronics IPZ40N04S53R1 Series 40 V 3.1 mOhm 71 W N-Channel OptiMOS Mosfet - TSDSON-8-33 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Container: Reel 5000
Reel
  • 5,000 $0.3700
  • 10,000 $0.3550
$0.3550 / $0.3700 Buy Now
DISTI # 71240694
Verical Trans MOSFET N-CH 40V 40A Automotive AEC-Q101 8-Pin TSDSON EP T/R Min Qty: 28 Package Multiple: 1 Date Code: 2333 Americas - 4445
  • 33 $0.9525
  • 50 $0.9175
  • 100 $0.6638
  • 200 $0.6288
  • 500 $0.5338
  • 1,000 $0.4913
$0.4913 / $0.9525 Buy Now
Rochester Electronics IPZ40N04 - 20V-800V Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 1366850
  • 1 $0.4244
  • 25 $0.4159
  • 100 $0.3989
  • 500 $0.3820
  • 1,000 $0.3607
$0.3607 / $0.4244 Buy Now
DISTI # IPZ40N04S53R1
TME Transistor: N-MOSFET, unipolar, 40V, 40A, 71W, PG-TSDSON-8 Min Qty: 1 0
  • 1 $1.1200
  • 10 $0.8900
  • 100 $0.7000
  • 500 $0.6800
$0.6800 / $1.1200 RFQ
DISTI # C1S322001062112
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 4445
  • 5 $1.1300
  • 10 $0.7620
  • 50 $0.7340
  • 100 $0.5310
  • 200 $0.5030
  • 500 $0.4270
  • 1,000 $0.3930
$0.3930 / $1.1300 Buy Now
DISTI # SP001152006
EBV Elektronik Power MOSFET, N Channel, 40 V, 40 A, 3.1 Milliohms, TSDSON, 8 Pins, Surface Mount (Alt: SP001152006) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days EBV - 110000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 90000
  • 5,000 $0.6032
  • 90,000 $0.5582
$0.5582 / $0.6032 Buy Now

Part Details for IPZ40N04S53R1ATMA1

IPZ40N04S53R1ATMA1 CAD Models

IPZ40N04S53R1ATMA1 Part Data Attributes

IPZ40N04S53R1ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPZ40N04S53R1ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 40A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8-33, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TSDSON-8-33, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 40 A
Drain-source On Resistance-Max 0.0036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Element Material SILICON

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