Datasheets
IPW90R120C3XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPW90R120C3XKSA1 by Infineon Technologies AG

Results Overview of IPW90R120C3XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IPW90R120C3XKSA1 Information

IPW90R120C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPW90R120C3XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 02AH6894
Newark Mosfet, n-Ch,900V,36A,150Deg C,417W, transistor Polarity-N Channel, continuous Drain Current Id-36A,... drain Source Voltage Vds-900V, on Resistance Rdson-0.1Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-3V, power Rohs Compliant: Yes |Infineon IPW90R120C3XKSA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 83
  • 1 $15.8700
  • 10 $15.1900
  • 25 $10.9400
  • 50 $10.6200
  • 100 $10.3000
  • 480 $10.2900
$10.2900 / $15.8700 Buy Now
DISTI # 448-IPW90R120C3XKSA1-ND
DigiKey MOSFET N-CH 900V 36A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 262
In Stock
  • 1 $15.5700
  • 30 $10.4143
  • 120 $9.8945
$9.8945 / $15.5700 Buy Now
DISTI # IPW90R120C3XKSA1
Avnet Americas Power Transistor MOSFET N-Channel Enhancement 900V 36A 3-Pin TO-247 - Rail/Tube (Alt: IPW90R120C3XKS... A1) more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube 630
  • 1 $14.9548
$14.9548 Buy Now
DISTI # 726-IPW90R120C3XKSA1
Mouser Electronics MOSFETs HIGH POWER_LEGACY RoHS: Compliant 1236
  • 1 $12.8400
  • 10 $12.6100
  • 25 $10.2800
  • 240 $10.2700
  • 480 $10.2300
$10.2300 / $12.8400 Buy Now
DISTI # V36:1790_23606127
Arrow Electronics Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks Date Code: 2404 Americas - 3160
  • 240 $9.6860
  • 480 $9.2800
$9.2800 / $9.6860 Buy Now
DISTI # E02:0323_14388979
Arrow Electronics Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2410 Europe - 1140
  • 1 $15.2528
  • 10 $14.6211
  • 25 $10.6096
  • 30 $9.8190
  • 100 $9.6030
  • 120 $9.5021
  • 240 $9.2699
  • 1,200 $8.8775
$8.8775 / $15.2528 Buy Now
Future Electronics 900V CoolMOS C3 Power Transistor RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 240
Tube
  • 30 $7.5400
  • 90 $7.4800
  • 120 $7.4600
  • 300 $7.4100
  • 450 $7.3600
$7.3600 / $7.5400 Buy Now
Future Electronics 900V CoolMOS C3 Power Transistor RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $7.5400
  • 90 $7.4800
  • 120 $7.4600
  • 300 $7.4100
  • 450 $7.3600
$7.3600 / $7.5400 Buy Now
DISTI # 82727065
Verical Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Date Code: 2404 Americas - 3120
  • 240 $9.6860
  • 480 $9.2800
$9.2800 / $9.6860 Buy Now
DISTI # 87616668
Verical Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2410 Americas - 1140
  • 1 $15.2345
  • 10 $14.6036
  • 25 $10.5969
  • 30 $9.8072
  • 100 $9.5915
  • 120 $9.4907
  • 240 $9.2588
  • 1,200 $8.8669
$8.8669 / $15.2345 Buy Now
DISTI # SP002548896
EBV Elektronik Power Transistor MOSFET NChannel Enhancement 900V 36A 3Pin TO247 (Alt: SP002548896) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 2088
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Part Details for IPW90R120C3XKSA1

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IPW90R120C3XKSA1 Part Data Attributes

IPW90R120C3XKSA1 Infineon Technologies AG
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IPW90R120C3XKSA1 Infineon Technologies AG Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1940 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 417 W
Pulsed Drain Current-Max (IDM) 96 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW90R120C3XKSA1

This table gives cross-reference parts and alternative options found for IPW90R120C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW90R120C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPW90R120C3FKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 36A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 IPW90R120C3XKSA1 vs IPW90R120C3FKSA1

IPW90R120C3XKSA1 Frequently Asked Questions (FAQ)

  • The maximum junction temperature for IPW90R120C3XKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.

  • Proper cooling is crucial for the IGBT's reliability. Ensure good thermal contact between the IGBT and the heat sink, and use a suitable thermal interface material. The heat sink should be designed to dissipate the maximum expected power loss.

  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the application note or contact Infineon's support team for specific guidance.

  • Yes, IPW90R120C3XKSA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are properly matched and that the gate drive circuitry is designed to handle the parallel configuration.

  • The maximum allowed dv/dt for IPW90R120C3XKSA1 is 10 kV/μs, as specified in the datasheet. Exceeding this value can lead to premature aging or failure of the IGBT.