Part Details for IPW90R120C3XKSA1 by Infineon Technologies AG
Results Overview of IPW90R120C3XKSA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPW90R120C3XKSA1 Information
IPW90R120C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPW90R120C3XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
02AH6894
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Newark | Mosfet, n-Ch,900V,36A,150Deg C,417W, transistor Polarity-N Channel, continuous Drain Current Id-36A,... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 83 |
|
$10.2900 / $15.8700 | Buy Now |
DISTI #
448-IPW90R120C3XKSA1-ND
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DigiKey | MOSFET N-CH 900V 36A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
262 In Stock |
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$9.8945 / $15.5700 | Buy Now |
DISTI #
IPW90R120C3XKSA1
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Avnet Americas | Power Transistor MOSFET N-Channel Enhancement 900V 36A 3-Pin TO-247 - Rail/Tube (Alt: IPW90R120C3XKS... more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks, 0 Days Container: Tube |
630 |
|
$14.9548 | Buy Now |
DISTI #
726-IPW90R120C3XKSA1
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Mouser Electronics | MOSFETs HIGH POWER_LEGACY RoHS: Compliant | 1236 |
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$10.2300 / $12.8400 | Buy Now |
DISTI #
V36:1790_23606127
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Arrow Electronics | Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks Date Code: 2404 | Americas - 3160 |
|
$9.2800 / $9.6860 | Buy Now |
DISTI #
E02:0323_14388979
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Arrow Electronics | Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2410 | Europe - 1140 |
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$8.8775 / $15.2528 | Buy Now |
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Future Electronics | 900V CoolMOS C3 Power Transistor RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Lead time: 15 Weeks Container: Tube |
240 Tube |
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$7.3600 / $7.5400 | Buy Now |
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Future Electronics | 900V CoolMOS C3 Power Transistor RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube |
0 Tube |
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$7.3600 / $7.5400 | Buy Now |
DISTI #
82727065
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Verical | Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Date Code: 2404 | Americas - 3120 |
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$9.2800 / $9.6860 | Buy Now |
DISTI #
87616668
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Verical | Trans MOSFET N-CH 900V 36A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2410 | Americas - 1140 |
|
$8.8669 / $15.2345 | Buy Now |
Part Details for IPW90R120C3XKSA1
IPW90R120C3XKSA1 CAD Models
IPW90R120C3XKSA1 Part Data Attributes
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IPW90R120C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW90R120C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1940 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 417 W | |
Pulsed Drain Current-Max (IDM) | 96 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPW90R120C3XKSA1
This table gives cross-reference parts and alternative options found for IPW90R120C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW90R120C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPW90R120C3FKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 36A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | IPW90R120C3XKSA1 vs IPW90R120C3FKSA1 |