Part Details for IPW65R420CFDFKSA1 by Infineon Technologies AG
Overview of IPW65R420CFDFKSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
Price & Stock for IPW65R420CFDFKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1737
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Newark | Mosfet, N-Ch, 650V, 8.7A, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:8.7A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.378Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPW65R420CFDFKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.4000 / $2.7900 | Buy Now |
DISTI #
IPW65R420CFDFKSA1
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Avnet Americas | Trans MOSFET N-CH 700V 8.7A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R420CFDFKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 15 Partner Stock |
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RFQ | |
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Rochester Electronics | IPW65R420 - 8.7A, 650V, 0.42ohm, N-Chanel Power MOSFET, TO-247 RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 15 |
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$1.4000 / $1.6500 | Buy Now |
DISTI #
IPW65R420CFDFKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 8.7A, 83.3W, PG-TO247-3 Min Qty: 1 | 4 |
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$2.2800 / $2.9400 | Buy Now |
Part Details for IPW65R420CFDFKSA1
IPW65R420CFDFKSA1 CAD Models
IPW65R420CFDFKSA1 Part Data Attributes
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IPW65R420CFDFKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW65R420CFDFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 227 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 8.7 A | |
Drain-source On Resistance-Max | 0.42 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 27 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |