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Transistors / Power Field-Effect Transistors / IPW60R190C6
Datasheets
IPW60R190C6 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Part Details for IPW60R190C6 by Infineon Technologies AG

Overview of IPW60R190C6 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPW60R190C6

Part # Distributor Description Stock Price Buy
DISTI # 726-IPW60R190C6
Mouser Electronics MOSFETs N-Ch 600V 20.2A TO247-3 CoolMOS C6 RoHS: Compliant 1839
  • 1 $3.8300
  • 10 $3.2200
  • 25 $2.4300
  • 100 $2.0500
  • 240 $1.9700
  • 480 $1.8600
  • 1,200 $1.8200
  • 2,640 $1.8000
$1.8000 / $3.8300 Buy Now
Bristol Electronics   150
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 20.2A I(D), 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 120
  • 1 $4.3500
  • 25 $2.9000
  • 87 $2.6825
$2.6825 / $4.3500 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 20.2A I(D), 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 24
  • 1 $4.3500
  • 3 $2.9000
  • 10 $2.1750
$2.1750 / $4.3500 Buy Now
Win Source Electronics MOSFET N-CH 600V 20.2A TO247 4800
  • 18 $2.8346
  • 43 $2.3259
  • 67 $2.2532
  • 92 $2.1805
  • 119 $2.1078
  • 159 $1.8898
$1.8898 / $2.8346 Buy Now

Part Details for IPW60R190C6

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IPW60R190C6 Part Data Attributes

Parametric Data
IPW60R190C6 Infineon Technologies AG
Buy Now Datasheet
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IPW60R190C6 Infineon Technologies AG Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-247
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 418 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.2 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 151 W
Pulsed Drain Current-Max (IDM) 59 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW60R190C6

This table gives cross-reference parts and alternative options found for IPW60R190C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R190C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI60R190C6 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN Infineon Technologies AG IPW60R190C6 vs IPI60R190C6
IPP60R190C6 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG IPW60R190C6 vs IPP60R190C6

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