Part Details for IPW60R165CPFKSA1 by Infineon Technologies AG
Overview of IPW60R165CPFKSA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IPW60R165CPFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6808
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Newark | Mosfet, N Channel, 650V, 21A, To-247-3, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:21A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPW60R165CPFKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2 |
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$3.9600 / $5.8200 | Buy Now |
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DISTI #
IPW60R165CPFKSA1-ND
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DigiKey | MOSFET N-CH 600V 21A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
240 In Stock |
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$2.7277 / $5.6000 | Buy Now |
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DISTI #
IPW60R165CPFKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 21A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R165CPFKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$2.9310 / $3.5591 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Container: Tube | 0Tube |
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$2.9500 | Buy Now |
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DISTI #
IPW60R165CPFKSA1
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TME | Transistor: N-MOSFET, unipolar, 600V, 21A, 192W, PG-TO247-3 Min Qty: 1 | 0 |
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$4.9400 / $6.6700 | RFQ |
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Ameya Holding Limited | Min Qty: 30 | 112 |
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$4.8996 / $5.4441 | Buy Now |
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DISTI #
SP000095483
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EBV Elektronik | Trans MOSFET N-CH 650V 21A 3-Pin TO-247 Tube (Alt: SP000095483) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPW60R165CPFKSA1
IPW60R165CPFKSA1 CAD Models
IPW60R165CPFKSA1 Part Data Attributes:
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IPW60R165CPFKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R165CPFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 522 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.165 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 61 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW60R165CPFKSA1
This table gives cross-reference parts and alternative options found for IPW60R165CPFKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R165CPFKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STFI28N60M2 | N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in I2PAKFP package | STMicroelectronics | IPW60R165CPFKSA1 vs STFI28N60M2 |
| IPI60R165CPXKSA1 | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R165CPFKSA1 vs IPI60R165CPXKSA1 |
| STI25NM60ND | 21A, 600V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | IPW60R165CPFKSA1 vs STI25NM60ND |
| IPI60R165CPAKSA1 | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R165CPFKSA1 vs IPI60R165CPAKSA1 |
| LSB20N60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Xi’an Lonten Renewable Energy Technology Inc | IPW60R165CPFKSA1 vs LSB20N60 |
| STF28N60M2 | N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package | STMicroelectronics | IPW60R165CPFKSA1 vs STF28N60M2 |
| LSC20N65 | Power Field-Effect Transistor, 20A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Xi’an Lonten Renewable Energy Technology Inc | IPW60R165CPFKSA1 vs LSC20N65 |
| STI26NM60N | 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | IPW60R165CPFKSA1 vs STI26NM60N |
| LSB20N65F | Power Field-Effect Transistor, 20A I(D), 650V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Xi’an Lonten Renewable Energy Technology Inc | IPW60R165CPFKSA1 vs LSB20N65F |
| SSF26NS60 | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | IPW60R165CPFKSA1 vs SSF26NS60 |