Part Details for IPW60R125CP by Infineon Technologies AG
Overview of IPW60R125CP by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IPW60R125CP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPW60R125CP
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Mouser Electronics | MOSFETs N-Ch 650V 25A TO247-3 CoolMOS CP RoHS: Compliant | 136 |
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$3.7600 / $6.6500 | Buy Now |
Part Details for IPW60R125CP
IPW60R125CP CAD Models
IPW60R125CP Part Data Attributes
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IPW60R125CP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW60R125CP
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247 | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 708 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Pulsed Drain Current-Max (IDM) | 82 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPW60R125CP
This table gives cross-reference parts and alternative options found for IPW60R125CP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R125CP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPW60R125CPXK | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R125CP vs IPW60R125CPXK |
| STB30NM60N | 25A, 600V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | IPW60R125CP vs STB30NM60N |
| IPI60R125CPXKSA1 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R125CP vs IPI60R125CPXKSA1 |
| IPP60R125CP | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPW60R125CP vs IPP60R125CP |
| FCP25N60N_F02 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | IPW60R125CP vs FCP25N60N_F02 |
| IPI60R125CP | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPW60R125CP vs IPI60R125CP |
| IPW60R125CPFKSA1 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW60R125CP vs IPW60R125CPFKSA1 |