Datasheets
IPW60R125CFD7XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPW60R125CFD7XKSA1 by Infineon Technologies AG

Overview of IPW60R125CFD7XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for IPW60R125CFD7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 71AC0410
Newark Mosfet, 600V, 18A, 150Deg C, 92W, Transistor Polarity:N Channel, Continuous Drain Current Id:18A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.104Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPW60R125CFD7XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 230
  • 1 $5.6700
  • 10 $4.8400
  • 25 $4.5900
  • 50 $4.3000
  • 100 $4.0000
  • 480 $3.7900
  • 720 $3.1500
$3.1500 / $5.6700 Buy Now
DISTI # 448-IPW60R125CFD7XKSA1-ND
DigiKey MOSFET N-CH 600V 18A TO247-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube 95
In Stock
  • 1 $5.0300
  • 30 $3.9897
  • 120 $3.4197
  • 510 $3.0397
  • 1,020 $2.6027
  • 2,010 $2.4508
$2.4508 / $5.0300 Buy Now
DISTI # IPW60R125CFD7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 18A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R125CFD7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 240 $2.9156
$2.9156 Buy Now
DISTI # 726-IPW60R125CFD7XKS
Mouser Electronics MOSFET HIGH POWER_NEW RoHS: Compliant 318
  • 1 $5.0300
  • 10 $4.7900
  • 25 $3.9900
  • 100 $3.4200
  • 240 $3.2200
  • 480 $2.6000
  • 1,200 $2.4500
$2.4500 / $5.0300 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.6700
  • 120 $2.5900
  • 300 $2.5400
  • 750 $2.4800
  • 1,200 $2.4100
$2.4100 / $2.6700 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $2.6700
  • 120 $2.5900
  • 300 $2.5400
  • 750 $2.4800
  • 1,200 $2.4100
$2.4100 / $2.6700 Buy Now
DISTI # IPW60R125CFD7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 18A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R125CFD7XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube 0
  • 240 $2.9156
$2.9156 Buy Now
Ameya Holding Limited   Min Qty: 5 235
  • 5 $6.6542
  • 10 $6.5876
  • 15 $6.2583
$6.2583 / $6.6542 Buy Now
Ameya Holding Limited   159
RFQ
DISTI # SP001686040
EBV Elektronik Transistor MOSFET N-CH 600V 18A 3-Pin TO-247 Tube (Alt: SP001686040) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2916152
element14 Asia-Pacific MOSFET, 600V, 18A, 150DEG C, 92W RoHS: Compliant Min Qty: 1 Container: Each 230
  • 1 $5.7382
  • 10 $4.8225
  • 25 $4.5566
  • 100 $3.6925
  • 240 $3.1460
  • 480 $2.9614
  • 1,200 $2.7916
$2.7916 / $5.7382 Buy Now
DISTI # 2916152
Farnell MOSFET, 600V, 18A, 150DEG C, 92W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 230
  • 1 $5.5811
  • 10 $3.9919
  • 100 $2.6028
  • 500 $2.5278
  • 1,000 $2.4527
$2.4527 / $5.5811 Buy Now

Part Details for IPW60R125CFD7XKSA1

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IPW60R125CFD7XKSA1 Part Data Attributes:

IPW60R125CFD7XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW60R125CFD7XKSA1 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 78 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 92 W
Pulsed Drain Current-Max (IDM) 66 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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