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Transistors / Power Field-Effect Transistors / IPW60R080P7XKSA1
Datasheets
IPW60R080P7XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Part Details for IPW60R080P7XKSA1 by Infineon Technologies AG

Overview of IPW60R080P7XKSA1 by Infineon Technologies AG

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Price & Stock for IPW60R080P7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 93AC7139
Newark Mosfet, N-Ch, 600V, 37A, 129W, To-247, Transistor Polarity:N Channel, Continuous Drain Current Id:37A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.069Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPW60R080P7XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 180
  • 1 $5.2700
  • 10 $4.7300
  • 25 $4.1800
  • 50 $3.8900
  • 100 $3.5900
  • 480 $3.5800
  • 720 $2.7100
$2.7100 / $5.2700 Buy Now
DISTI # 448-IPW60R080P7XKSA1-ND
DigiKey MOSFET N-CH 600V 37A TO247-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube 638
In Stock
  • 1 $5.8700
  • 50 $3.1046
  • 100 $2.8373
  • 500 $2.3693
  • 1,000 $2.3660
$2.3660 / $5.8700 Buy Now
DISTI # IPW60R080P7XKSA1
Avnet Americas Transistor MOSFET N-CH 600V 37A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R080P7XKSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 17 Weeks, 0 Days Container: Tube 240
RFQ
DISTI # 726-IPW60R080P7XKSA1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 875
  • 1 $4.9900
  • 25 $2.8200
  • 100 $2.6000
  • 240 $2.5900
  • 480 $2.3600
$2.3600 / $4.9900 Buy Now
DISTI # E02:0323_11639727
Arrow Electronics Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2417 Europe - 300
  • 1 $3.9251
  • 25 $2.5953
  • 100 $2.4346
  • 240 $2.2407
  • 480 $2.1273
$2.1273 / $3.9251 Buy Now
Future Electronics Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 240 Lead time: 17 Weeks Container: Tube 4320
Tube
  • 30 $2.4100
  • 480 $2.3700
  • 720 $2.3500
  • 960 $2.3400
  • 1,200 $2.2900
$2.2900 / $2.4100 Buy Now
Future Electronics Single N-Channel 600 V 80 mOhm 51 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks Container: Tube 0
Tube
  • 30 $2.4100
  • 480 $2.3700
  • 720 $2.3500
  • 960 $2.3400
  • 1,200 $2.2900
$2.2900 / $2.4100 Buy Now
DISTI # 80935979
Verical Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2417 Americas - 300
  • 3 $4.0040
  • 25 $2.6475
  • 100 $2.4836
  • 240 $2.2858
  • 480 $2.1700
$2.1700 / $4.0040 Buy Now
DISTI # 82120263
Verical Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 7 Package Multiple: 1 Date Code: 2422 Americas - 240
  • 7 $5.0625
  • 10 $4.1000
  • 50 $3.5375
  • 200 $3.5250
$3.5250 / $5.0625 Buy Now
DISTI # C1S322000663190
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 240
  • 1 $3.9900
  • 10 $3.2300
  • 50 $2.9600
$2.9600 / $3.9900 Buy Now
DISTI # SP001647040
EBV Elektronik Transistor MOSFET N-CH 600V 37A 3-Pin TO-247 Tube (Alt: SP001647040) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 600V 37A TO247-3 / N-Channel 600 V 37A (Tc) 129W (Tc) Through Hole PG-TO247-3 2400
  • 12 $4.4908
  • 28 $3.6848
  • 43 $3.5697
  • 58 $3.4545
  • 75 $3.3394
  • 101 $2.9939
$2.9939 / $4.4908 Buy Now

Part Details for IPW60R080P7XKSA1

IPW60R080P7XKSA1 CAD Models

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IPW60R080P7XKSA1 Part Data Attributes

Parametric Data
IPW60R080P7XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW60R080P7XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 118 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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