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Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPW60R041P6
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Mouser Electronics | MOSFET HIGH POWER PRICE/PERFORM RoHS: Compliant | 4 |
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$8.1600 / $11.8200 | Buy Now |
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 600V, 0.041OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247 | 28 |
|
$8.3753 / $12.8850 | Buy Now |
DISTI #
TMOS1349
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Rutronik | N-CH 600V 77,5A 41mOhm TO247 RoHS: Compliant Min Qty: 240 Package Multiple: 240 Container: Tube |
Stock DE - 1200 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$9.4100 | Buy Now |
|
Chip1Cloud | Very high commutation ruggedness | 1397 |
|
RFQ |
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IPW60R041P6
Infineon Technologies AG
Buy Now
Datasheet
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IPW60R041P6
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1954 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain-source On Resistance-Max | 0.041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 267 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |