Part Details for IPW50R140CPFKSA1 by Infineon Technologies AG
Overview of IPW50R140CPFKSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPW50R140CPFKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y2083
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Newark | Mosfet Transistor, N Channel, 23 A, 550 V, 0.13 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IPW50R140CPFKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IPW50R140CPFKSA1
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Avnet Americas | Power MOSFET, N Channel, 550 V, 23 A, 0.13 ohm, TO-247, Through Hole - Rail/Tube (Alt: IPW50R140CPFKSA1) RoHS: Compliant Min Qty: 112 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 720 Partner Stock |
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RFQ | |
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Rochester Electronics | IPW50R140 - 500V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 720 |
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$2.7800 / $3.2800 | Buy Now |
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LCSC | 550V 23A 192W 140m14A10V 3.5V930uA 1 N-Channel TO-247-3-1 MOSFETs ROHS | 4 |
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$4.8245 / $5.1041 | Buy Now |
Part Details for IPW50R140CPFKSA1
IPW50R140CPFKSA1 CAD Models
IPW50R140CPFKSA1 Part Data Attributes
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IPW50R140CPFKSA1
Infineon Technologies AG
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Datasheet
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IPW50R140CPFKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 616 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 23 A | |
| Drain-source On Resistance-Max | 0.14 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |