Datasheets
IPU60R2K0C6AKMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3

Part Details for IPU60R2K0C6AKMA1 by Infineon Technologies AG

Overview of IPU60R2K0C6AKMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IPU60R2K0C6AKMA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPU60R2K0 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 47296
  • 1 $0.2625
  • 25 $0.2573
  • 100 $0.2468
  • 500 $0.2363
  • 1,000 $0.2231
$0.2231 / $0.2625 Buy Now
DISTI # SP001399934
EBV Elektronik LOW POWER_LEGACY (Alt: SP001399934) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPU60R2K0C6AKMA1

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IPU60R2K0C6AKMA1 Part Data Attributes:

IPU60R2K0C6AKMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPU60R2K0C6AKMA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-251, IPAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 11 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 6 A
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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