There are no models available for this part yet.
Overview of IPU60R1K0CEAKMA2 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IPU60R1K0CEAKMA2 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
IPU60R1K0CEAKMA2
|
Avnet Americas | 600VCoolMOSªCEPowerTransistor - Rail/Tube (Alt: IPU60R1K0CEAKMA2) RoHS: Compliant Min Qty: 1250 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 1500 Partner Stock |
|
$0.2480 / $0.2918 | Buy Now | |
Rochester Electronics | IPU60R1K0 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1500 |
|
$0.2480 / $0.2918 | Buy Now |
CAD Models for IPU60R1K0CEAKMA2 by Infineon Technologies AG
Part Data Attributes for IPU60R1K0CEAKMA2 by Infineon Technologies AG
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
IPAK-3
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
4 Weeks
|
Avalanche Energy Rating (Eas)
|
46 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
6.8 A
|
Drain-source On Resistance-Max
|
1 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-251
|
JESD-30 Code
|
R-PSIP-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Operating Temperature-Min
|
-40 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
61 W
|
Pulsed Drain Current-Max (IDM)
|
12 A
|
Surface Mount
|
NO
|
Terminal Finish
|
Tin (Sn)
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IPU60R1K0CEAKMA2
This table gives cross-reference parts and alternative options found for IPU60R1K0CEAKMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPU60R1K0CEAKMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPU60R1K0CE | Power Field-Effect Transistor, 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Infineon Technologies AG | IPU60R1K0CEAKMA2 vs IPU60R1K0CE |