Part Details for IPTG014N10NM5 by Infineon Technologies AG
Results Overview of IPTG014N10NM5 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IPTG014N10NM5 Information
IPTG014N10NM5 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPTG014N10NM5
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 1436 |
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$8.4375 / $12.6563 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2021 Date Code: 2021 | 1795 |
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$5.6250 / $11.4450 | Buy Now |
Part Details for IPTG014N10NM5
IPTG014N10NM5 CAD Models
IPTG014N10NM5 Part Data Attributes
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IPTG014N10NM5
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPTG014N10NM5
Infineon Technologies AG
Power Field-Effect Transistor, 366A I(D), 100V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 775 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 366 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 140 pF | |
| JESD-30 Code | R-PSSO-G8 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1464 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |