-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 32A I(D), 100V, 0.0015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1592 |
|
$5.5350 / $11.0700 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 | 1 |
|
$3.6900 / $5.3300 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 1990 |
|
$3.6900 / $5.3300 | Buy Now |
|
LCSC | 100V 300A 375W 1.5m10V150A 3.8V250uA 1PCSNChannel HSOF-8 MOSFETs ROHS | 2074 |
|
$1.6522 / $2.6500 | Buy Now |
|
Win Source Electronics | Ideal for high frequency switching and sync. rec | 160489 |
|
$1.8840 / $2.8260 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPT015N10N5
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPT015N10N5
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 652 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.0015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 1200 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |