-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IPT012N08N5ATMA1 by Infineon Technologies AG
Overview of IPT012N08N5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPT012N08N5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
97Y1841
|
Newark | Mosfet, N-Ch, 80V, 300A, Pg-Hsof-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:300A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPT012N08N5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 6295 |
|
$3.7100 / $6.5500 | Buy Now |
|
DISTI #
86AK5275
|
Newark | Mosfet, N-Ch, 80V, 300A, Pg-Hsof Rohs Compliant: Yes |Infineon IPT012N08N5ATMA1 Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$3.4800 | Buy Now |
|
DISTI #
IPT012N08N5ATMA1CT-ND
|
DigiKey | MOSFET N-CH 80V 300A 8HSOF Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6640 In Stock |
|
$3.2765 / $7.5500 | Buy Now |
|
DISTI #
IPT012N08N5ATMA1
|
Avnet Americas | Trans MOSFET N-CH 80V 300A 8-Pin HSOF T/R - Tape and Reel (Alt: IPT012N08N5ATMA1) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
|
DISTI #
726-IPT012N08N5ATMA1
|
Mouser Electronics | MOSFETs N-Ch 80V 300A HSOF-8 RoHS: Compliant | 16789 |
|
$3.3400 / $6.3000 | Buy Now |
|
|
Future Electronics | Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS™ Power Mosfet - HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel | 2000Reel |
|
$2.7700 | Buy Now |
|
|
Future Electronics | Single N-Channel 80 V 1.2 mOhm 178 nC OptiMOS™ Power Mosfet - HSOF-8-1 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$3.2100 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 52A I(D), 80V, 0.0012OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 12 |
|
$4.5000 / $9.0000 | Buy Now |
|
DISTI #
IPT012N08N5ATMA1
|
TME | Transistor: N-MOSFET, unipolar, 80V, 279A, Idm: 1200A, 375W Min Qty: 1 | 0 |
|
$6.8700 / $10.7000 | RFQ |
|
DISTI #
SP001227054
|
EBV Elektronik | Trans MOSFET N-CH 80V 300A 8-Pin HSOF T/R (Alt: SP001227054) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 21 Weeks, 0 Days | EBV - 22000 |
|
Buy Now |
Part Details for IPT012N08N5ATMA1
IPT012N08N5ATMA1 CAD Models
IPT012N08N5ATMA1 Part Data Attributes
|
|
IPT012N08N5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPT012N08N5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 52A I(D), 80V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOF-8-1, 8 PIN
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-F2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 817 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.0012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-F2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 1200 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |