Part Details for IPS65R1K5CE by Infineon Technologies AG
Overview of IPS65R1K5CE by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
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Price & Stock for IPS65R1K5CE
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
30607950
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Verical | Trans MOSFET N-CH 650V 5.2A 3-Pin(3+Tab) IPAK SL Tube Min Qty: 113 Package Multiple: 1 | Americas - 240 |
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$0.2763 / $0.2775 | Buy Now |
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DISTI #
C1S322000454857
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Tube | 240 |
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$0.2210 / $0.2450 | Buy Now |
Part Details for IPS65R1K5CE
IPS65R1K5CE CAD Models
IPS65R1K5CE Part Data Attributes
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IPS65R1K5CE
Infineon Technologies AG
Buy Now
Datasheet
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IPS65R1K5CE
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IPAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8.3 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Resources and Additional Insights for IPS65R1K5CE
Reference Designs related to IPS65R1K5CE
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15W 5 V USB adapter reference design board using Quasi-Resonant PWM IC ICE2QS03G with CoolMOS™ IPS65R1K5CE
This is the 15W 5 V USB adapter reference design board using Quasi-Resonant PWM IC ICE2QS03G (DSO-8) with CoolMOS™ IPS65R1K5CE (IPAK SL) and secondary side synchronous rectification IC IR1161 (5-Pin SOT-23) with OptiMOS™ BSZ100N06LS3 G (S3O8, 3x3 mm style SuperSO8). The reference USB adapter board is specially designed in a very small form factor, high efficiency, low standby power, various modes of protections for a high reliable system and it pass conductive EMI, ESD and Lightning surge test. This board can be used for production by customers after final verification with minor changes.