Datasheets
IPP65R065C7XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for IPP65R065C7XKSA1 by Infineon Technologies AG

Overview of IPP65R065C7XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for IPP65R065C7XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC0302
Newark Mosfet, N-Ch, 650V, 33A, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:33A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPP65R065C7XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 492
  • 1 $4.4200
$4.4200 Buy Now
DISTI # 448-IPP65R065C7XKSA1-ND
DigiKey MOSFET N-CH 650V 33A TO220-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube 448
In Stock
  • 1 $7.9100
  • 50 $4.2996
  • 100 $3.9521
  • 500 $3.5135
$3.5135 / $7.9100 Buy Now
DISTI # IPP65R065C7XKSA1
Avnet Americas Trans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R065C7XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPP65R065C7XKSA1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 0
  • 500 $3.5100
$3.5100 Order Now
Future Electronics Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $3.5400
  • 1,000 $3.4500
$3.4500 / $3.5400 Buy Now
Future Electronics Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $3.5400
  • 1,000 $3.4500
$3.4500 / $3.5400 Buy Now
DISTI # 75723792
Verical Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2341 Americas - 760
  • 5 $6.4250
  • 10 $5.5125
  • 50 $5.4000
  • 100 $5.3875
$5.3875 / $6.4250 Buy Now
DISTI # IPP65R065C7XKSA1
TME Transistor: N-MOSFET, unipolar, 650V, 33A, 171W, PG-TO220-3 Min Qty: 1 0
  • 1 $12.0500
  • 3 $11.2900
  • 10 $9.8800
  • 25 $8.2800
$8.2800 / $12.0500 RFQ
DISTI # C1S322000454820
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Tube 760
  • 1 $4.5800
  • 10 $4.5600
  • 50 $4.4700
  • 100 $4.4600
  • 200 $4.4500
  • 500 $4.3100
$4.3100 / $4.5800 Buy Now
DISTI # SP001080100
EBV Elektronik Trans MOSFET N-CH 700V 33A 3-Pin TO-220 Tube (Alt: SP001080100) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks, 0 Days EBV - 500
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 500 500
  • 500 $6.0100
$6.0100 Buy Now

Part Details for IPP65R065C7XKSA1

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IPP65R065C7XKSA1 Part Data Attributes

IPP65R065C7XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPP65R065C7XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 33A I(D), 650V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 171 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 171 W
Pulsed Drain Current-Max (IDM) 145 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP65R065C7XKSA1

This table gives cross-reference parts and alternative options found for IPP65R065C7XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R065C7XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPW65R065C7 Power Field-Effect Transistor Infineon Technologies AG IPP65R065C7XKSA1 vs IPW65R065C7
IPP65R065C7 Power Field-Effect Transistor Infineon Technologies AG IPP65R065C7XKSA1 vs IPP65R065C7

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