Datasheets
IPP50R350CPXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP50R350CPXKSA1 by Infineon Technologies AG

Results Overview of IPP50R350CPXKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IPP50R350CPXKSA1 Information

IPP50R350CPXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPP50R350CPXKSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPP50R350 - 500V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 9699
  • 1 $0.8329
  • 25 $0.8162
  • 100 $0.7829
  • 500 $0.7496
  • 1,000 $0.7080
$0.7080 / $0.8329 Buy Now

Part Details for IPP50R350CPXKSA1

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IPP50R350CPXKSA1 Part Data Attributes

IPP50R350CPXKSA1 Infineon Technologies AG
Buy Now Datasheet
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IPP50R350CPXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 246 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.35 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP50R350CPXKSA1

This table gives cross-reference parts and alternative options found for IPP50R350CPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP50R350CPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP50R399CP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPP50R350CPXKSA1 vs IPP50R399CP
IPP50R399CPXKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPP50R350CPXKSA1 vs IPP50R399CPXKSA1
IPA50R350CP Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IPP50R350CPXKSA1 vs IPA50R350CP
IPA50R350CPXKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 IPP50R350CPXKSA1 vs IPA50R350CPXKSA1

IPP50R350CPXKSA1 Related Parts

IPP50R350CPXKSA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the IPP50R350CPXKSA1 is 175°C.

  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.

  • The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).

  • Use a suitable voltage clamp or transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

  • The maximum allowable Vds for the IPP50R350CPXKSA1 is 500V.

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