Part Details for IPP47N10SL26AKSA1 by Infineon Technologies AG
Results Overview of IPP47N10SL26AKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPP47N10SL26AKSA1 Information
IPP47N10SL26AKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPP47N10SL26AKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 120V-300V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 250 |
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$0.5078 / $0.5974 | Buy Now |
DISTI #
SP000225707
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EBV Elektronik | Transistor MOSFET NChannel 100V 47A 3Pin TO220 (Alt: SP000225707) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPP47N10SL26AKSA1
IPP47N10SL26AKSA1 CAD Models
IPP47N10SL26AKSA1 Part Data Attributes
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IPP47N10SL26AKSA1
Infineon Technologies AG
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Datasheet
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IPP47N10SL26AKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 400 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 47 A | |
Drain-source On Resistance-Max | 0.04 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 188 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPP47N10SL26AKSA1
This table gives cross-reference parts and alternative options found for IPP47N10SL26AKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP47N10SL26AKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPB47N10SL-26 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPP47N10SL26AKSA1 vs IPB47N10SL-26 |
NDP710BES62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IPP47N10SL26AKSA1 vs NDP710BES62Z |
FQP44N10F | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IPP47N10SL26AKSA1 vs FQP44N10F |
IPB47N10SL26ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPP47N10SL26AKSA1 vs IPB47N10SL26ATMA1 |
IPI47N10SL26AKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPP47N10SL26AKSA1 vs IPI47N10SL26AKSA1 |
IPI47N10SL-26 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | IPP47N10SL26AKSA1 vs IPI47N10SL-26 |
IRFP150A_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN | IPP47N10SL26AKSA1 vs IRFP150A_NL |
IPP47N10SL-26XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPP47N10SL26AKSA1 vs IPP47N10SL-26XK |