Datasheets
IPP45P03P4L-11 by:
Infineon Technologies AG
Honest Han
Infineon Technologies AG
Not Found

Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP45P03P4L-11 by Infineon Technologies AG

Results Overview of IPP45P03P4L-11 by Infineon Technologies AG

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IPP45P03P4L-11 Information

IPP45P03P4L-11 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPP45P03P4L-11

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IPP45P03P4L-11 Part Data Attributes

IPP45P03P4L-11 Infineon Technologies AG
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IPP45P03P4L-11 Infineon Technologies AG Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 110 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.0111 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 58 W
Pulsed Drain Current-Max (IDM) 180 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IPP45P03P4L-11

This table gives cross-reference parts and alternative options found for IPP45P03P4L-11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP45P03P4L-11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPP45P03P4L11AKSA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IPP45P03P4L-11 vs IPP45P03P4L11AKSA1

IPP45P03P4L-11 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the IPP45P03P4L-11 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -55°C to 150°C for optimal performance and reliability.

  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is properly mounted and secured. Additionally, consider the PCB layout and thermal management of the surrounding components.

  • The recommended gate drive voltage for the IPP45P03P04L-11 is between 4.5V and 10V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device. A higher gate drive voltage can reduce the device's on-state resistance, but it may also increase the switching losses.

  • Yes, the IPP45P03P04L-11 is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation at high frequencies.

  • To protect the IPP45P03P04L-11 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.