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Part Details for IPP17N25S3100AKSA1 by Infineon Technologies AG
Overview of IPP17N25S3100AKSA1 by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Price & Stock for IPP17N25S3100AKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9072
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Newark | Mosfet, Aec-Q101, N-Ch, 250V, To-220, Transistor Polarity:N Channel, Continuous Drain Current Id:17A, Drain Source Voltage Vds:250V, On Resistance Rds(On):0.085Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon IPP17N25S3100AKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
75723411
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Verical | Trans MOSFET N-CH 250V 17A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube Min Qty: 8 Package Multiple: 1 Date Code: 2238 | Americas - 1000 |
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$1.6375 / $4.0875 | Buy Now |
|
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Rochester Electronics | IPP17N25 - 120V-300V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 18614 |
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$1.2300 / $1.4500 | Buy Now |
|
DISTI #
IPP17N25S3100AKSA1
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TME | Transistor: N-MOSFET, OptiMOS™ T, unipolar, 250V, 13.3A, Idm: 68A Min Qty: 1 | 483 |
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$1.9800 / $2.7600 | Buy Now |
|
DISTI #
C1S322000840948
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Chip1Stop | MOSFET RoHS: Compliant Container: Tube | 1000 |
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$1.3100 / $3.2700 | Buy Now |
Part Details for IPP17N25S3100AKSA1
IPP17N25S3100AKSA1 CAD Models
IPP17N25S3100AKSA1 Part Data Attributes
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IPP17N25S3100AKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPP17N25S3100AKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 54 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 107 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |