There are no models available for this part yet.
Overview of IPP06CN10LGHKSA1 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
CAD Models for IPP06CN10LGHKSA1 by Infineon Technologies AG
Part Data Attributes for IPP06CN10LGHKSA1 by Infineon Technologies AG
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
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Package Description
|
FLANGE MOUNT, R-PSFM-T3
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Additional Feature
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LOGIC LEVEL COMPATIBLE
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Avalanche Energy Rating (Eas)
|
480 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
100 A
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Drain-source On Resistance-Max
|
0.0062 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-220AB
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JESD-30 Code
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R-PSFM-T3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
400 A
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Surface Mount
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NO
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Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for IPP06CN10LGHKSA1
This table gives cross-reference parts and alternative options found for IPP06CN10LGHKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP06CN10LGHKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPP06CN10NGXKSA1 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP06CN10LGHKSA1 vs IPP06CN10NGXKSA1 |
IPP06CN10NG | Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP06CN10LGHKSA1 vs IPP06CN10NG |
IPP06CN10NGHKSA1 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP06CN10LGHKSA1 vs IPP06CN10NGHKSA1 |
IPP06CN10LGXKSA1 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP06CN10LGHKSA1 vs IPP06CN10LGXKSA1 |
IPI06CN10NGHKSA1 | Power Field-Effect Transistor, 100A I(D), 100V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | IPP06CN10LGHKSA1 vs IPI06CN10NGHKSA1 |