Part Details for IPP062NE7N3GXKSA1 by Infineon Technologies AG
Overview of IPP062NE7N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPP062NE7N3GXKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Rochester Electronics | IPP062NE7 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 500 |
|
RFQ | |
DISTI #
IPP062NE7N3GXKSA1
|
TME | Transistor: N-MOSFET, unipolar, 75V, 80A, 136W, PG-TO220-3 Min Qty: 1 | 0 |
|
$0.9100 / $1.6300 | RFQ |
Part Details for IPP062NE7N3GXKSA1
IPP062NE7N3GXKSA1 CAD Models
IPP062NE7N3GXKSA1 Part Data Attributes
|
IPP062NE7N3GXKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPP062NE7N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | GREEN, PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 160 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0062 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IPP062NE7N3GXKSA1
This table gives cross-reference parts and alternative options found for IPP062NE7N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP062NE7N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPP062NE7N3G | Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPP062NE7N3GXKSA1 vs IPP062NE7N3G |