Datasheets
IPP062NE7N3GXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP062NE7N3GXKSA1 by Infineon Technologies AG

Overview of IPP062NE7N3GXKSA1 by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPP062NE7N3GXKSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPP062NE7 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 500
RFQ
DISTI # IPP062NE7N3GXKSA1
TME Transistor: N-MOSFET, unipolar, 75V, 80A, 136W, PG-TO220-3 Min Qty: 1 0
  • 1 $1.6300
  • 5 $1.4000
  • 25 $1.1300
  • 100 $0.9800
  • 500 $0.9100
$0.9100 / $1.6300 RFQ

Part Details for IPP062NE7N3GXKSA1

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IPP062NE7N3GXKSA1 Part Data Attributes

IPP062NE7N3GXKSA1 Infineon Technologies AG
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IPP062NE7N3GXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 160 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0062 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IPP062NE7N3GXKSA1

This table gives cross-reference parts and alternative options found for IPP062NE7N3GXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP062NE7N3GXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP062NE7N3G Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP062NE7N3GXKSA1 vs IPP062NE7N3G
Part Number Description Manufacturer Compare
IPP062NE7N3G Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP062NE7N3GXKSA1 vs IPP062NE7N3G

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