Datasheets
IPP04N03LA by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 25V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN

Part Details for IPP04N03LA by Infineon Technologies AG

Overview of IPP04N03LA by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for IPP04N03LA

Part # Distributor Description Stock Price Buy
Bristol Electronics   30
RFQ
Quest Components   24
  • 1 $2.1600
  • 3 $1.6200
  • 16 $1.3500
$1.3500 / $2.1600 Buy Now

Part Details for IPP04N03LA

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IPP04N03LA Part Data Attributes

IPP04N03LA Infineon Technologies AG
Buy Now Datasheet
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IPP04N03LA Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 25V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 290 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.0067 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 107 W
Pulsed Drain Current-Max (IDM) 385 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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