Part Details for IPL65R195C7AUMA1 by Infineon Technologies AG
Overview of IPL65R195C7AUMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPL65R195C7AUMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84AC6839
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Newark | 2Asfet, N-Ch, 650V, 12A, 75W, Vson, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.173Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPL65R195C7AUMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2659 |
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$1.3600 / $2.8500 | Buy Now |
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DISTI #
448-IPL65R195C7AUMA1CT-ND
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DigiKey | MOSFET N-CH 650V 12A 4VSON Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1937 In Stock |
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$1.2805 / $3.7200 | Buy Now |
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DISTI #
IPL65R195C7AUMA1
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Avnet Americas | Transistor MOSFET N-CH 650V 12A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R195C7AUMA1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
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DISTI #
726-IPL65R195C7AUMA1
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Mouser Electronics | MOSFETs HIGH POWER BEST IN CLASS RoHS: Compliant | 2925 |
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$1.2800 / $2.7500 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$1.2600 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
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$1.2600 | Buy Now |
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DISTI #
77265129
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Verical | Trans MOSFET N-CH 650V 12A 4-Pin VSON EP T/R Min Qty: 16 Package Multiple: 1 Date Code: 2350 | Americas - 3000 |
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$1.5250 / $1.9750 | Buy Now |
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Rochester Electronics | IPL65R195 - 12A, 650V, 0.195ohm, N-Chanel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 16 |
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$1.2100 / $1.4200 | Buy Now |
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DISTI #
IPL65R195C7AUMA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 12A, 75W, PG-VSON-4 Min Qty: 1 | 0 |
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$1.8600 / $2.9900 | RFQ |
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DISTI #
C1S322001061450
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Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 3000 |
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$1.3400 / $1.7800 | Buy Now |
Part Details for IPL65R195C7AUMA1
IPL65R195C7AUMA1 CAD Models
IPL65R195C7AUMA1 Part Data Attributes
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IPL65R195C7AUMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPL65R195C7AUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 12A I(D), 650V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PSSO-N4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 57 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.195 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PSSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2A | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 49 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPL65R195C7AUMA1
This table gives cross-reference parts and alternative options found for IPL65R195C7AUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPL65R195C7AUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPL65R195C7 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 12A I(D), 650V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 | IPL65R195C7AUMA1 vs IPL65R195C7 |