Datasheets
IPL60R095CFD7AUMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPL60R095CFD7AUMA1 by Infineon Technologies AG

Overview of IPL60R095CFD7AUMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPL60R095CFD7AUMA1

Part # Distributor Description Stock Price Buy
DISTI # 71AC0389
Newark Mosfet, 600V, 25A, 150Deg C, 147W, Transistor Polarity:N Channel, Continuous Drain Current Id:25A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.076Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPL60R095CFD7AUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $5.5300
  • 10 $4.7600
  • 25 $4.6100
  • 50 $4.2900
  • 100 $3.9700
  • 250 $3.8700
  • 500 $3.5700
  • 1,000 $3.1900
$3.1900 / $5.5300 Buy Now
DISTI # 448-IPL60R095CFD7AUMA1CT-ND
DigiKey MOSFET N CH Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 2750
In Stock
  • 1 $5.0900
  • 10 $4.2700
  • 100 $3.4546
  • 500 $3.0707
  • 1,000 $2.6293
  • 3,000 $2.4758
$2.4758 / $5.0900 Buy Now
DISTI # IPL60R095CFD7AUMA1
Avnet Americas Transistor MOSFET N-CH 600V 25A 4-Pin VSON T/R - Tape and Reel (Alt: IPL60R095CFD7AUMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 3,000 $2.9453
$2.9453 Buy Now
DISTI # 726-IPL60R095CFD7AUM
Mouser Electronics MOSFET HIGH POWER_NEW RoHS: Compliant 623
  • 1 $4.3800
  • 10 $3.8200
  • 25 $3.7900
  • 100 $3.2100
  • 250 $3.2000
  • 500 $2.8800
  • 1,000 $2.6200
  • 3,000 $2.4700
$2.4700 / $4.3800 Buy Now
DISTI # V72:2272_21592745
Arrow Electronics Trans MOSFET N-CH 600V 25A 4-Pin VSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2241 Container: Cut Strips Americas - 577
  • 1 $3.3620
  • 10 $3.1010
  • 25 $3.0670
  • 100 $2.7600
  • 250 $2.7320
  • 500 $2.5650
$2.5650 / $3.3620 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 3,000 $2.4300
$2.4300 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 3,000 $2.4300
$2.4300 Buy Now
DISTI # 77273258
Verical Trans MOSFET N-CH 600V 25A 4-Pin VSON EP T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2350 Americas - 9000
  • 3,000 $3.0593
$3.0593 Buy Now
DISTI # 64559510
Verical Trans MOSFET N-CH 600V 25A 4-Pin VSON EP T/R Min Qty: 3 Package Multiple: 1 Date Code: 2241 Americas - 577
  • 3 $3.3620
  • 10 $3.1010
  • 25 $3.0670
  • 100 $2.7600
  • 250 $2.7320
  • 500 $2.5650
$2.5650 / $3.3620 Buy Now
Bristol Electronics   180
RFQ
Ameya Holding Limited   311
RFQ
Ameya Holding Limited   Min Qty: 750 6000
  • 750 $5.1784
  • 1,500 $5.0241
$5.0241 / $5.1784 Buy Now
DISTI # SP001715622
EBV Elektronik Transistor MOSFET N-CH 600V 25A 4-Pin VSON T/R (Alt: SP001715622) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPL60R095CFD7AUMA1

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IPL60R095CFD7AUMA1 Part Data Attributes

IPL60R095CFD7AUMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPL60R095CFD7AUMA1 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 114 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.095 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PSSO-N4
JESD-609 Code e3
Moisture Sensitivity Level 2A
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 147 W
Pulsed Drain Current-Max (IDM) 97 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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