Datasheets
IPL60R065P7AUMA1 by:

Power Field-Effect Transistor, 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4

Part Details for IPL60R065P7AUMA1 by Infineon Technologies AG

Overview of IPL60R065P7AUMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IPL60R065P7AUMA1

Part # Distributor Description Stock Price Buy
DISTI # 49AC8000
Newark Mosfet, N-Ch, 600V, 41A, Vson, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:41A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPL60R065P7AUMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $7.0200
  • 10 $6.0200
  • 25 $5.4600
  • 50 $5.2400
  • 100 $5.0100
  • 250 $4.7200
  • 500 $4.4200
  • 1,000 $3.9800
$3.9800 / $7.0200 Buy Now
DISTI # IPL60R065P7AUMA1CT-ND
DigiKey MOSFET N-CH 600V 41A 4VSON Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 10973
In Stock
  • 1 $6.7600
  • 10 $5.7930
  • 100 $4.8273
  • 500 $4.2594
  • 1,000 $3.8335
  • 3,000 $3.5921
$3.5921 / $6.7600 Buy Now
DISTI # IPL60R065P7AUMA1
Avnet Americas Transistor MOSFET N-CH 600V 41A 4-Pin VSON T/R - Tape and Reel (Alt: IPL60R065P7AUMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $4.3578
$4.3578 Buy Now
DISTI # 726-IPL60R065P7AUMA1
Mouser Electronics MOSFET HIGH POWER_NEW RoHS: Compliant 5481
  • 1 $6.7500
  • 10 $5.7900
  • 25 $5.4600
  • 100 $4.8200
  • 250 $4.5400
  • 500 $4.2500
  • 1,000 $3.8300
  • 3,000 $3.5900
$3.5900 / $6.7500 Buy Now
Future Electronics Single N-Channel 600 V 65 mOhm 67 nC CoolMOS™ Power Mosfet - VSON-4 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $3.6400
$3.6400 Buy Now
Future Electronics Single N-Channel 600 V 65 mOhm 67 nC CoolMOS™ Power Mosfet - VSON-4 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $3.6400
$3.6400 Buy Now
DISTI # 71240205
Verical Trans MOSFET N-CH 600V 41A 4-Pin VSON EP T/R Min Qty: 5 Package Multiple: 1 Date Code: 2314 Americas - 5857
  • 5 $7.3750
  • 10 $5.9875
  • 50 $5.5125
  • 100 $5.2625
  • 200 $5.0375
  • 500 $4.7875
  • 1,000 $4.6250
$4.6250 / $7.3750 Buy Now
DISTI # IPL60R065P7AUMA1
Avnet Americas Transistor MOSFET N-CH 600V 41A 4-Pin VSON T/R - Tape and Reel (Alt: IPL60R065P7AUMA1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $4.3578
$4.3578 Buy Now
DISTI # IPL60R065P7
TME Transistor: N-MOSFET, unipolar, 600V, 32A, 201W, PG-VSON-4 Min Qty: 1 0
  • 1 $6.7500
  • 5 $6.0700
  • 20 $5.3700
  • 100 $4.8200
$4.8200 / $6.7500 RFQ
Ameya Holding Limited Single N-Channel 600 V 65 mOhm 67 nC CoolMOS™ Power Mosfet - VSON-4 2891
RFQ
Chip1Cloud MOSFET N-CH 650V 41A 4VSON 2790
RFQ
DISTI # SP001657396
EBV Elektronik Transistor MOSFET N-CH 600V 41A 4-Pin VSON T/R (Alt: SP001657396) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2841636RL
element14 Asia-Pacific MOSFET, N-CH, 600V, 41A, VSON RoHS: Compliant Min Qty: 10 Container: Reel 0
  • 10 $5.5494
  • 100 $4.7957
  • 500 $4.4927
  • 1,000 $4.0494
$4.0494 / $5.5494 Buy Now
DISTI # 2841636
element14 Asia-Pacific MOSFET, N-CH, 600V, 41A, VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $7.1307
  • 10 $5.5494
  • 100 $4.7957
  • 500 $4.4927
  • 1,000 $4.0494
$4.0494 / $7.1307 Buy Now
DISTI # 2841636RL
Farnell MOSFET, N-CH, 600V, 41A, VSON RoHS: Compliant Min Qty: 10 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 10 $5.2748
  • 50 $5.0613
  • 100 $4.8353
  • 250 $4.5590
$4.5590 / $5.2748 Buy Now
DISTI # 2841636
Farnell MOSFET, N-CH, 600V, 41A, VSON RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 1 $7.4350
  • 5 $6.3549
  • 10 $5.2748
  • 50 $5.0613
  • 100 $4.8353
  • 250 $4.5590
$4.5590 / $7.4350 Buy Now

Part Details for IPL60R065P7AUMA1

IPL60R065P7AUMA1 CAD Models

IPL60R065P7AUMA1 Part Data Attributes:

IPL60R065P7AUMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPL60R065P7AUMA1 Infineon Technologies AG Power Field-Effect Transistor, 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, S-PSSO-N4
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 159 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PSSO-N4
JESD-609 Code e3
Moisture Sensitivity Level 2A
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 151 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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