Part Details for IPI65R380C6XKSA1 by Infineon Technologies AG
Overview of IPI65R380C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPI65R380C6XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPI65R380C6XKSA1-ND
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DigiKey | MOSFET N-CH 650V 10.6A TO262-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
500 In Stock |
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$0.8522 / $2.7600 | Buy Now |
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DISTI #
IPI65R380C6XKSA1
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Avnet Americas | Trans MOSFET N-CH 700V 10.6A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI65R380C6XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.8350 / $0.9900 | Buy Now |
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Future Electronics | CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube | 0Tube |
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$0.8350 / $0.9900 | Buy Now |
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Rochester Electronics | IPI65R380 - MOSFET N-Channel Single 650V 10.6A (Tc) RoHS: Compliant Status: Active Min Qty: 1 | 300 |
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$0.8049 / $0.9469 | Buy Now |
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DISTI #
IPI65R380C6XKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 10.6A, 83W, PG-TO262-3 Min Qty: 1 | 0 |
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$1.1200 / $1.8800 | RFQ |
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DISTI #
SP000785080
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EBV Elektronik | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-262 Tube (Alt: SP000785080) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPI65R380C6XKSA1
IPI65R380C6XKSA1 CAD Models
IPI65R380C6XKSA1 Part Data Attributes
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IPI65R380C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPI65R380C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 215 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 10.6 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 29 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPI65R380C6XKSA1
This table gives cross-reference parts and alternative options found for IPI65R380C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI65R380C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STI14NM65N | STMicroelectronics | Check for Price | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | IPI65R380C6XKSA1 vs STI14NM65N |
| SPP11N65C3XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI65R380C6XKSA1 vs SPP11N65C3XKSA1 |
| SIHP12N65E-GE3 | Vishay Intertechnologies | $1.4426 | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | IPI65R380C6XKSA1 vs SIHP12N65E-GE3 |
| LSG11N65E | Xi’an Lonten Renewable Energy Technology Inc | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | IPI65R380C6XKSA1 vs LSG11N65E |
| IPP65R380C6XKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI65R380C6XKSA1 vs IPP65R380C6XKSA1 |
| STW11NM65N | STMicroelectronics | Check for Price | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB, ROHS COMPLIANT, TO-247, 3 PIN | IPI65R380C6XKSA1 vs STW11NM65N |
| SPP11N65C3XK | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI65R380C6XKSA1 vs SPP11N65C3XK |
| SSF11NS65U | Suzhou Good-Ark Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IPI65R380C6XKSA1 vs SSF11NS65U |
| SPP11N65C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IPI65R380C6XKSA1 vs SPP11N65C3HKSA1 |
| STP11NM65N | STMicroelectronics | Check for Price | N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in TO-220 package | IPI65R380C6XKSA1 vs STP11NM65N |