Part Details for IPI65R280C6XKSA1 by Infineon Technologies AG
Overview of IPI65R280C6XKSA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPI65R280C6XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86115532
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Verical | Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 289 Package Multiple: 1 Date Code: 1601 | Americas - 1500 |
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$1.1794 / $1.3000 | Buy Now |
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DISTI #
86109379
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Verical | Trans MOSFET N-CH 650V 13.8A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 289 Package Multiple: 1 Date Code: 1201 | Americas - 500 |
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$1.1794 / $1.3000 | Buy Now |
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Rochester Electronics | IPI65R280 - 650V and 700V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 1500 |
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$0.9435 / $1.1100 | Buy Now |
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DISTI #
IPI65R280C6XKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 13.8A, 104W, PG-TO262-3 Min Qty: 1 | 0 |
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$1.3900 / $2.3200 | RFQ |
Part Details for IPI65R280C6XKSA1
IPI65R280C6XKSA1 CAD Models
IPI65R280C6XKSA1 Part Data Attributes
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IPI65R280C6XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPI65R280C6XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-262AA | |
| Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 39 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |