Part Details for IPI60R199CPXKSA1 by Infineon Technologies AG
Overview of IPI60R199CPXKSA1 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPI60R199CPXKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPI60R199CPXKSA1-ND
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DigiKey | MOSFET N-CH 600V 16A TO262-3 Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
DISTI #
IPI60R199CPXKSA1
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Avnet Americas | Trans MOSFET N-CH 650V 16A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI60R199CPXKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Container: Tube | 0 |
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RFQ |
Part Details for IPI60R199CPXKSA1
IPI60R199CPXKSA1 CAD Models
IPI60R199CPXKSA1 Part Data Attributes
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IPI60R199CPXKSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
IPI60R199CPXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-262AA | |
Package Description | GREEN, PLASTIC, TO-262, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 436 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.199 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPI60R199CPXKSA1
This table gives cross-reference parts and alternative options found for IPI60R199CPXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R199CPXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPP60R199CPXKSA1 | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPI60R199CPXKSA1 vs IPP60R199CPXKSA1 |
IPP60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IPI60R199CPXKSA1 vs IPP60R199CP |
IPI60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | IPI60R199CPXKSA1 vs IPI60R199CP |
IPW60R199CP | Power Field-Effect Transistor, 16A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPI60R199CPXKSA1 vs IPW60R199CP |
NTPF190N65S3H | Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 16 A, 190 mΩ, TO220F, TO-220-3 FullPak, 1000-TUBE | onsemi | IPI60R199CPXKSA1 vs NTPF190N65S3H |