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Transistors / Power Field-Effect Transistors / IPI60R190C6XKSA1
Datasheets
IPI60R190C6XKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Part Details for IPI60R190C6XKSA1 by Infineon Technologies AG

Overview of IPI60R190C6XKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPI60R190C6XKSA1

Part # Distributor Description Stock Price Buy
DISTI # IPI60R190C6XKSA1-ND
DigiKey MOSFET N-CH 600V 20.2A TO262-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 495
In Stock
  • 1 $3.0100
  • 10 $1.9850
  • 100 $1.5014
$1.5014 / $3.0100 Buy Now
DISTI # IPI60R190C6XKSA1
Avnet Americas Transistor MOSFET N-Channel 600V 20.2A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI60R190C6XKSA1) RoHS: Compliant Min Qty: 209 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 900 Partner Stock
  • 1 $1.7500
  • 25 $1.6300
  • 25 $1.7200
  • 100 $1.5700
  • 1,000 $1.4200
$1.4200 / $1.7500 Buy Now
DISTI # IPI60R190C6XKSA1
Avnet Americas Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI60R190C6XKSA1) RoHS: Not Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube 0
RFQ
Future Electronics CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $1.6300
  • 200 $1.5800
  • 500 $1.5500
  • 1,250 $1.5200
  • 2,000 $1.4800
$1.4800 / $1.6300 Buy Now
Future Electronics CoolMOS RoHS: Not Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $1.6300
  • 200 $1.5800
  • 500 $1.5500
  • 1,250 $1.5200
  • 2,000 $1.4800
$1.4800 / $1.6300 Buy Now
DISTI # 84376380
Verical Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-262 Tube RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2431 Americas - 450
  • 5 $2.4603
$2.4603 Buy Now
Rochester Electronics IPI60R190 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 900
  • 1 $1.7500
  • 25 $1.7200
  • 100 $1.6500
  • 500 $1.5800
  • 1,000 $1.4900
$1.4900 / $1.7500 Buy Now
DISTI # IPI60R190C6XKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 20.2A, 151W, PG-TO262-3 Min Qty: 1 18
  • 1 $3.8600
  • 3 $3.3200
  • 10 $2.6700
  • 100 $2.3100
$2.3100 / $3.8600 Buy Now
DISTI # C1S322000525395
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 450
  • 1 $4.1400
  • 10 $2.8600
  • 50 $2.4000
  • 100 $1.7300
$1.7300 / $4.1400 Buy Now
DISTI # SP000660618
EBV Elektronik Transistor MOSFET N-Channel 600V 20.2A 3-Pin TO-262 Tube (Alt: SP000660618) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPI60R190C6XKSA1

IPI60R190C6XKSA1 CAD Models

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IPI60R190C6XKSA1 Part Data Attributes

Parametric Data
IPI60R190C6XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPI60R190C6XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-262AA
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 418 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.2 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 59 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPI60R190C6XKSA1

This table gives cross-reference parts and alternative options found for IPI60R190C6XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI60R190C6XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPB20N60C3ATMA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPI60R190C6XKSA1 vs SPB20N60C3ATMA1
IPW60R190C6XK Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPI60R190C6XKSA1 vs IPW60R190C6XK
FCPF165N65S3R0L Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, 1000-TUBE onsemi IPI60R190C6XKSA1 vs FCPF165N65S3R0L
SIHP21N60EF-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP21N60EF-GE3
STW28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-247 package STMicroelectronics IPI60R190C6XKSA1 vs STW28N65M2
SIHP22N60EL-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.197ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP22N60EL-GE3
SIHP21N65EF-GE3 Power Field-Effect Transistor, 21A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHP21N65EF-GE3
R6520KNZ4C13 Power Field-Effect Transistor, ROHM Semiconductor IPI60R190C6XKSA1 vs R6520KNZ4C13
SPP20N60C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPI60R190C6XKSA1 vs SPP20N60C3XKSA1
SIHB21N60EF-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 Vishay Intertechnologies IPI60R190C6XKSA1 vs SIHB21N60EF-GE3

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