Datasheets
IPI45P03P4L11AKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Part Details for IPI45P03P4L11AKSA1 by Infineon Technologies AG

Results Overview of IPI45P03P4L11AKSA1 by Infineon Technologies AG

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IPI45P03P4L11AKSA1 Information

IPI45P03P4L11AKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IPI45P03P4L11AKSA1

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IPI45P03P4L11AKSA1 Part Data Attributes

IPI45P03P4L11AKSA1 Infineon Technologies AG
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IPI45P03P4L11AKSA1 Infineon Technologies AG Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-262, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 110 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.0111 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPI45P03P4L11AKSA1

This table gives cross-reference parts and alternative options found for IPI45P03P4L11AKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI45P03P4L11AKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPI45P03P4L-11 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.0111ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN IPI45P03P4L11AKSA1 vs IPI45P03P4L-11

IPI45P03P4L11AKSA1 Related Parts

IPI45P03P4L11AKSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • When selecting a gate driver for the IPI45P03P4L11AKSA1, consider the driver's output current capability, voltage rating, and rise/fall times. Infineon recommends using their EiceDRIVER™ gate driver family, which is optimized for their power MOSFETs.

  • Although the datasheet specifies a maximum VGS of ±20V, it's recommended to limit the voltage to ±15V during switching to prevent damage to the MOSFET's gate oxide layer.

  • To ensure SOA compliance, calculate the MOSFET's junction temperature (Tj) and drain-source voltage (VDS) during operation. Use Infineon's SOA curves and thermal models to verify that your design stays within the safe operating area.

  • Infineon recommends following the JEDEC J-STD-020D.1 standard for soldering conditions, which specifies a peak temperature of 260°C and a dwell time of 30 seconds.