Datasheets
IPI45N06S4L08AKSA3 by: Infineon Technologies AG

Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Part Details for IPI45N06S4L08AKSA3 by Infineon Technologies AG

Overview of IPI45N06S4L08AKSA3 by Infineon Technologies AG

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Price & Stock for IPI45N06S4L08AKSA3

Part # Distributor Description Stock Price Buy
Rochester Electronics IPI45N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 30216
  • 1 $0.4150
  • 25 $0.4067
  • 100 $0.3901
  • 500 $0.3735
  • 1,000 $0.3528
$0.3528 / $0.4150 Buy Now

Part Details for IPI45N06S4L08AKSA3

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IPI45N06S4L08AKSA3 Part Data Attributes

IPI45N06S4L08AKSA3 Infineon Technologies AG
Buy Now Datasheet
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IPI45N06S4L08AKSA3 Infineon Technologies AG Power Field-Effect Transistor, 45A I(D), 60V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-262, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 45 A
Drain-source On Resistance-Max 0.0082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 180 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPI45N06S4L08AKSA3

This table gives cross-reference parts and alternative options found for IPI45N06S4L08AKSA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPI45N06S4L08AKSA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPI45N06S4L08AKSA2 Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPI45N06S4L08AKSA3 vs IPI45N06S4L08AKSA2
Part Number Description Manufacturer Compare
IRFS620 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IPI45N06S4L08AKSA3 vs IRFS620
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPI45N06S4L08AKSA3 vs IPB80N06S2LH5ATMA1
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments IPI45N06S4L08AKSA3 vs NDB706AL
SPP80N06S2L-06 Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPI45N06S4L08AKSA3 vs SPP80N06S2L-06
STW20NM60FD N-CHANNEL 600V 0.26 Ohm 20A TO-247 FDmesh™ POWER MOSFET STMicroelectronics IPI45N06S4L08AKSA3 vs STW20NM60FD
RFD14N06 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor IPI45N06S4L08AKSA3 vs RFD14N06
PHB55N04LT 55A, 35V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors IPI45N06S4L08AKSA3 vs PHB55N04LT
NDB706B TRANSISTOR 70 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation IPI45N06S4L08AKSA3 vs NDB706B
MTD10N05E-1 Power Field-Effect Transistor, 10A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 Motorola Semiconductor Products IPI45N06S4L08AKSA3 vs MTD10N05E-1
FQD45N03L Power Field-Effect Transistor, 20A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3 PIN Fairchild Semiconductor Corporation IPI45N06S4L08AKSA3 vs FQD45N03L

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