Part Details for IPG20N10S4L35ATMA1 by Infineon Technologies AG
Overview of IPG20N10S4L35ATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPG20N10S4L35ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
13AC9060
|
Newark | Mosfet, N-Ch, 100V, 20A, 175Deg C, 43W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:100V, Continuous Drain Current Id N Channel:20A, Continuous Drain Current Id P Channel:20A Rohs Compliant: Yes |Infineon IPG20N10S4L35ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 180 |
|
$0.8340 | Buy Now |
|
DISTI #
86AK5254
|
Newark | Mosfet, N-Ch, 100V, 20A, Tdson Rohs Compliant: Yes |Infineon IPG20N10S4L35ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.6810 | Buy Now |
|
DISTI #
IPG20N10S4L35ATMA1CT-ND
|
DigiKey | MOSFET 2N-CH 100V 20A 8TDSON Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
36991 In Stock |
|
$0.5950 / $1.5800 | Buy Now |
|
DISTI #
IPG20N10S4L35ATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R - Tape and Reel (Alt: IPG20N10S4L35ATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.7364 | Buy Now |
|
DISTI #
13AC9060
|
Avnet Americas | Trans MOSFET N-CH 100V 20A 8-Pin TDSON EP T/R - Product that comes on tape, but is not reeled (Alt: 13AC9060) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 180 Partner Stock |
|
$0.9460 / $1.4600 | Buy Now |
|
DISTI #
726-IPG20N10S4L35ATM
|
Mouser Electronics | MOSFET MOSFET RoHS: Compliant | 29303 |
|
$0.5850 / $1.2900 | Buy Now |
|
|
Future Electronics | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.5950 | Buy Now |
|
|
Future Electronics | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 12 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$0.5950 / $0.8000 | Buy Now |
|
DISTI #
71329888
|
Verical | Trans MOSFET N-CH 100V 20A Automotive AEC-Q101 8-Pin TDSON EP T/R Min Qty: 26 Package Multiple: 1 | Americas - 15000 |
|
$0.7200 / $1.2137 | Buy Now |
|
|
Bristol Electronics | 1235 |
|
RFQ |
Part Details for IPG20N10S4L35ATMA1
IPG20N10S4L35ATMA1 CAD Models
IPG20N10S4L35ATMA1 Part Data Attributes
|
|
IPG20N10S4L35ATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPG20N10S4L35ATMA1
Infineon Technologies AG
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.035 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 60 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPG20N10S4L35ATMA1
This table gives cross-reference parts and alternative options found for IPG20N10S4L35ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPG20N10S4L35ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPG20N10S4L-35 | Power Field-Effect Transistor | Infineon Technologies AG | IPG20N10S4L35ATMA1 vs IPG20N10S4L-35 |