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Part Details for IPG20N04S4L-11A by Infineon Technologies AG
Overview of IPG20N04S4L-11A by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPG20N04S4L-11A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPG20N04S4L-11A
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Mouser Electronics | MOSFET MOSFET_(20V 40V) RoHS: Compliant | 0 |
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$0.4730 / $0.4960 | Order Now |
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DISTI #
TMOS3279
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Rutronik | DUAL N-CH 40V 20A 10,1mOhm RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel |
Stock DE - 5000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.4496 | Buy Now |
Part Details for IPG20N04S4L-11A
IPG20N04S4L-11A CAD Models
IPG20N04S4L-11A Part Data Attributes
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IPG20N04S4L-11A
Infineon Technologies AG
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Datasheet
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IPG20N04S4L-11A
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 40V, 0.0116ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TDSON-8-10, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0116 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |