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Transistors / Power Field-Effect Transistors / IPDD60R080G7XTMA1
Datasheets
IPDD60R080G7XTMA1 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPDD60R080G7XTMA1 by Infineon Technologies AG

Results Overview of IPDD60R080G7XTMA1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IPDD60R080G7XTMA1 Information

IPDD60R080G7XTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IPDD60R080G7XTMA1

Part # Distributor Description Stock Price Buy
DISTI # 59AC7040
Newark Mosfet, N-Ch, 600V, 29A, Hdsop, Transistor Polarity:N Channel, Continuous Drain Current Id:29A, D... rain Source Voltage Vds:600V, On Resistance Rds(On):0.069Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power Rohs Compliant: Yes |Infineon IPDD60R080G7XTMA1 more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1689
  • 1 $4.7300
  • 10 $3.9700
  • 25 $3.9000
  • 50 $3.6300
  • 100 $3.3500
  • 250 $3.3200
  • 500 $3.0200
$3.0200 / $4.7300 Buy Now
DISTI # IPDD60R080G7XTMA1CT-ND
DigiKey MOSFET N-CH 600V 29A HDSOP-10 Min Qty: 1 Lead time: 17 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2376
In Stock
  • 1 $4.6400
  • 10 $3.8960
  • 100 $3.2844
  • 500 $2.8662
  • 1,700 $2.8662
$2.8662 / $4.6400 Buy Now
DISTI # IPDD60R080G7XTMA1
Avnet Americas Transistor MOSFET N-CH 600V 29A 10-Pin HDSOP T/R - Tape and Reel (Alt: IPDD60R080G7XTMA1) RoHS: Compliant Min Qty: 1700 Package Multiple: 1700 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 1,700 $3.0084
  • 3,400 $2.9809
  • 6,800 $2.9534
  • 10,200 $2.9259
  • 13,600 $2.8984
$2.8984 / $3.0084 Buy Now
DISTI # 726-IPDD60R080G7XTM1
Mouser Electronics MOSFETs HIGH POWER_NEW RoHS: Compliant 1914
  • 1 $3.5600
  • 10 $3.0800
  • 25 $3.0400
  • 100 $2.9800
  • 500 $2.8700
  • 1,700 $2.8600
$2.8600 / $3.5600 Buy Now
DISTI # V72:2272_19084634
Arrow Electronics IPDD60R080G7XTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 29A 10-Pin HDSOP EP T/R - A... rrow.com more RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks Date Code: 2247 Container: Cut Strips Americas - 1664
  • 0 $2.9493
  • 1 $1.6900
  • 10 $1.6640
  • 25 $1.6380
  • 100 $1.6120
  • 250 $1.5860
  • 500 $1.5600
  • 1,000 $1.5340
$1.5340 / $2.9493 Buy Now
Future Electronics N-Channel 600 V 80 mOhm 42 nC CoolMOS™ G7 Power Transistor - HDSOP-10 RoHS: Compliant pbFree: Yes Min Qty: 1700 Package Multiple: 1700 Lead time: 17 Weeks Container: Reel 0
Reel
  • 1,700 $2.8900
$2.8900 Buy Now
Future Electronics N-Channel 600 V 80 mOhm 42 nC CoolMOS™ G7 Power Transistor - HDSOP-10 RoHS: Compliant pbFree: Yes Min Qty: 1700 Package Multiple: 1700 Lead time: 17 Weeks Container: Reel 0
Reel
  • 1,700 $2.8900
$2.8900 Buy Now
DISTI # 77383053
Verical IPDD60R080G7XTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 29A 10-Pin HDSOP EP T/R - A... rrow.com more RoHS: Compliant Min Qty: 8 Package Multiple: 1 Americas - 1700
  • 8 $3.4300
  • 10 $3.4100
  • 50 $3.3700
  • 500 $3.3600
  • 1,000 $3.2000
$3.2000 / $3.4300 Buy Now
DISTI # 65552248
Verical IPDD60R080G7XTMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 29A 10-Pin HDSOP EP T/R - A... rrow.com more RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2247 Americas - 1664
  • 3 $1.6900
  • 10 $1.6640
  • 25 $1.6380
  • 100 $1.6120
  • 250 $1.5860
  • 500 $1.5600
  • 1,000 $1.5340
$1.5340 / $1.6900 Buy Now
DISTI # IPDD60R080G7XTMA1
TME Transistor: N-MOSFET, CoolMOS™ G7, unipolar, 600V, 29A, Idm: 83A Min Qty: 1 0
  • 1 $6.2400
  • 10 $4.8800
  • 100 $4.3100
  • 500 $3.9200
  • 1,700 $3.6300
$3.6300 / $6.2400 RFQ
DISTI # IPDD60R080G7XTMA1
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1700
  • 1 $3.4300
  • 10 $3.4100
  • 50 $3.3700
  • 500 $3.3600
  • 1,000 $3.2000
$3.2000 / $3.4300 Buy Now
DISTI # SP001632824
EBV Elektronik Transistor MOSFET NCH 600V 29A 10Pin HDSOP TR (Alt: SP001632824) RoHS: Compliant Min Qty: 1700 Package Multiple: 1700 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
Vyrian Transistors 1510
RFQ

Part Details for IPDD60R080G7XTMA1

IPDD60R080G7XTMA1 CAD Models

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IPDD60R080G7XTMA1 Part Data Attributes

Parametric Data
IPDD60R080G7XTMA1 Infineon Technologies AG
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IPDD60R080G7XTMA1 Infineon Technologies AG Power Field-Effect Transistor,
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description HDSOP-10-1, 10 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 97 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PDSO-G10
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 10
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 174 W
Pulsed Drain Current-Max (IDM) 83 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

IPDD60R080G7XTMA1 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for IPDD60R080G7XTMA1 is -40°C to 150°C.

  • Proper thermal management can be achieved by ensuring good heat sink contact, using thermal interface materials, and maintaining a clean and dust-free environment.

  • The recommended gate resistor value for IPDD60R080G7XTMA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.

  • Yes, IPDD60R080G7XTMA1 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and synchronized to avoid uneven current sharing and thermal issues.

  • The maximum allowable voltage transient for IPDD60R080G7XTMA1 is typically 1.5 times the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.